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Articles

Technological processes and routes

  • The developed technologies of CMOS structures and nonvolatile memory based on them will encounter the fundamental limits already in 2018-2020. Currently, an intensive research is being executed for obtaining the new devices based on new physical prin...

Authors: Alexey N. Belov, Alexey A. Perevalov , Vasily I. Shevyakov
305 - 321
  • The electro-physical properties of silicon limit its application for opto-electronic elements and for microwave technology devices. In this case silicon is replaced by the material with higher band gap. These materials include the nitrides of the III...

Authors: Evgeny N. Vigdorovich
322 - 330
  • Production CMOS technology node shallow trench isolation (STI) etching process control has been discussed in the present paper. It has been shown that optical scatterometry can be adopted for that in order to increase throughput and informativity of ...

Authors: Alexander D. Volokhovskiy, Nikolay N. Gerasimenko , Dmitry S. Petrakov
331 - 340
  • For determination of the optimal thermodynamic processes in the air conditioning and filtration the exergy method has been used. The estimation of separate elements and of the whole complex the air conditioning and filtration based on the exergy effi...

Authors: Andrey S. Ryabyshenkov
341 - 349

INTEGRATED ELECTRONICS ELEMENTS

  • Effective diagnostic method of quality control of the digital integrated circuits (DIC) is measurement of their thermal parameters. Values of thermal parameters of real products are defined by quality of their production and can significantly differ ...

Authors: Viacheslav A. Sergeev, Iaroslav G. Tetenkin
350 - 360
  • The conventional programs permit to simulate the CMOS-microchips considering the influence of cosmic rays in active elements. However, the usage of such programs in simulation of the microchips considering the influence of the Single Event Effects (S...

Authors: Vladimir S. Kononov, Nikolai A. Shelepin
361 - 368

CIRCUIT ENGINEERING AND DESIGN

  • The transition to the level of the nanometer technologies leads to the new field in nanoelectronics, specifically the design based on the CMOS technology with 3D structure of the transistor. With decrease the size of transistors up to 32 nm and lower...

Authors: Sergey V. Gavrilov , Elena S. Kareva, Daria I. Ryzhova
369 - 378
  • The main algorithm for simulation of digital circuits, applied in digital simulators, is the algorithm of the event driven simulation. However, the implicit choice of the sequence functioning of simultaneously switching signals may lead to an appeara...

Authors: Dmitry А. Bulakh, Gennadiy G. Kazennov, Alexander V. Lapin
379 - 385

MICRO- AND NANOSYSTEM TECHNOLOGY

  • In microelectromechanical (MEMS) sensors the construction of a comb actuator is used for excitation of the resonator. In this article, we found a refined equation for the calculation of the electrostatic force of such an actuator. With the help of si...

Authors: Aung Thura, Boris M. Simonov, Sergey P. Timoshenkov
386 - 397

Brief reports

  • The technique of regulating the carbon nanotubes (CNT) concentration includes three stages. At the first stage, prior to the synthesis of nanotubes, the lithographic fragmentation of the catalyst is carried out in combination with its formation using...

Authors: Pavel K. Kondratiev
398 - 402
  • Rapidly progressing space systems demand designing reliable electronic devices. In the presence of space radiation different types of malfunctions could happen in the ICs. The high energy particles collide with semiconductor material and deposit char...

Authors: Valeri P. Timoshenkov, Ivan A. Fateev
402 - 406

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