Rapidly progressing space systems demand designing reliable electronic devices. In the presence of space radiation different types of malfunctions could happen in the ICs. The high energy particles collide with semiconductor material and deposit charge, which might cause current/voltage impulses on the logic outputs of cells. These current/voltage impulses could lead to single effects. One of approaches to suppress single events is using special trigger cells hardened against heavy ions. In this work a new flip flop trigger, based on DICE, has been presented. This proposed trigger is intended to be used for input tracks onboard apparatus. One of the specific featuris of input tracks is a big number of configuration registers. The data change in those register is extremely rare, hereby proposed trigger could be used here. Also, the application criterion for proposed trigger has been obtained. The calculations demonstrate comparison reliability for the proposed flip flop trigger and the standard one have been presented. Finally the physical level was given. In this paper the new flip flop trigger was presented. This trigger is specially aimed for input tracks. The proposed trigger has shown similar reliability with the standard one, but has 20 % less area. This area reduction could lead to area reduction of input track up to 10 %.
Литература
1. Таперо К.И., Улимов В.Н., Членов А.М. Радиационные эффекты в кремниевых ин-тегральных схемах космического применения. – М.: БИНОМ, Лаборатория знаний, 2012. – 304 с.
2. ГЛОНАСС. Принципы построения и функционирования / Р.В. Бакитько, Е.Н. Болденков, Н.Т.Булавский и др. Изд. 4-е. – М.: Радиотехника, 2010. – 800 с.
3. Mahurshi A. Understanding your power profile from RTL to gate-level implementation. – URL: https://www.synopsys.com/Company/Publications/SynopsysInsight/Pages/Art2-reduceadvsynthesis-IssQ4-11.aspx?cmp=Insight-I4-2011-Art2 (дата обращения: 21.02.2017).
4. Сравнительный анализ сбоеустойчивости ячеек 65 нм КМОП СОЗУ / М.С. Горбу-нов, П.С. Долотов, А.А. Антонов и др. // Вопросы атомной науки и техники. – 2014. – Вып. 3. – С. 47–55.
5. Долотов П.С., Горбунов М.С., Бобков С.Г. Моделирование сбоеустойчивости ос-новных узлов статического ОЗУ, выполненного по технологии объемного кремния 65 нм // Вопросы атомной науки и техники. – 2013. Вып. 2. – С. 54–61.
6. Neutron- and proton-induced single event upsets for D- and DICE-flip/flop designs at a 40 nm technology node / T. Loveless, S. Jagannathan, T. Reece et al. // IEEE trans. on nuclear science. – 2011. – Vol. 58. – No. 3. – P. 1008–1014.
7. Calin T., Nicolaidis M., Velazco R. Upset hardened memory design for submicron CMOS technology // IEEE Trans. on Nuclear Science,– 1996. – Vol. 43. – Iss. 6. – Part 1. – P. 2874–2878.
8. Nordyk S. RF SOI process design kit leverages PSP-SOI model. – URL: http://www.edn.com/electronics-products/other/4439517/RF-SOI-process-design-kit-leverages-PSP-SOI-model (дата обращения: 21.02.2017).