The developed technologies of CMOS structures and nonvolatile memory based on them will encounter the fundamental limits already in 2018-2020. Currently, an intensive research is being executed for obtaining the new devices based on new physical principles, which, potentially, will have more scaling possibilities. As such devices the memresistors have been proposed to be used. A review of up-to-date literature, devoted to recent developments in the area of creating the memresistor structures, as well as the arrays based on them, has been presented. The materials, manufacture technologies and physical principles of the memresistor structures functioning, as well as current technologies of creating the arrays of these structures have been in detail considered. The most perspective fields in development of the memresistors based on chalcogenides, metal oxides, fast ion conductors have been presented.
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