Persons

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The design features of the parameterized analog cells based on the matched matrix elements for SOI technology have been considered. The technique of creating such cells has been developed. The examples of the program code for building the parameterized analog cells, created based on the matched matrix elements , have been presented.

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The high-speed broadband analog integrated circuits based on the complimentary bipolar technology are widely used in modern equipment. The speed of such circuits is directly related to the boundary frequency of the transistors used. Some modern approaches to development of the complimentary bipolar technologies, providing the high performance of the designed integrated circuits and systems on a chip, have been considered. With the help of CAD software TCAD the device-technological modeling of the element basis has been carried out. The technological route for manufacturing an operational amplifier by the high-speed complimentary technology with a self-compliant emitter-base note, based on two layers of polysilicon, has been developed. To ensure the self-alignment of the base and emitter layers of polysilicon in manufacture of the NPN and PNP transistors with formation of an L-shaped nitride spacer has been used. The side insulation of the components has been accomplished by narrow vertical slits lined with oxide and silicon nitride and filled with polysilicon. The developed technological manufacturing route has permitted to reach the boundary frequency of the NPN and PNP transistors on a single crystal of 8-10 GHz with the breakdown voltages of the collector-emitter of more than 10 V. To a large extent the problem of the complementarity of bipolar transistors has been solved. In future this will give the possibility to create a new class of domestic broadband and high-speed analog-digital integrated circuits and to provide the technological independence of the Russian Federation.

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The quadrature modulators and demodulators are widely used to create modern wireless communication systems. It is important to ensure high quality of the transmitted signals in order to have the exchange of information without loss or failure. From the point of view of the spectral decomposition of the signal (Fourier series decomposition), the useful component of the spectrum must be much larger than all other components. The carrier (LO frequency and spurious sideband are the most critical and undesirable quadrature modulator output signal spectral components. In the work, in the course of the research using the methods of suppressing the parasitic components, based on minimizing phase, amplitude and current imbalances in various nodes of the quadrature modulator circuit, have been revealed. In order to realize suppression, the special digital-to-analog converters are used in conjunction with a polyphase filter on varicaps, a phase-shifting block and current sources. The effectiveness of these methods is confirmed by the achievement of suppression of parasitic components in prototypes of 50 dB or more. It has been stated that the phase unbalance minimization is more effective than the amplitude unbalance minimization to sideband suppression. It has been revealed that the use of a phase-shifting block is a more suitable architecture to control the phase unbalance. The obtained results can be useful in the design of high-precision radio frequency units for various purposes.

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The process and device simulation tools features have been analyzed. The tools have been analyzed applied to the calculation of electrical characteristics for various integrated circuit devices, operating in different external conditions. The model features having the maximum effect on the simulation results have been revealed.

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The trends in development of the scientific-educational programs in designing microelectronic devices have been considered, and the significance of involving students and PhD. post-graduates in scientific projects has been underlined. The problems of the standard cell libraries development have been investigated, the automation approaches based on the parametric cells and the application of the optimization methods have been proposed. The prototype of the inverter standard cell, created in accordance with the above theoretical basis, has been presented.

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Some specific features of the device-technological simulation have been considered. The results of the simulation and optimization of the integrated magnetosensitive elements as a part of micro- and nanosystems have been considered. The results of the simulation and optimization of the constructive -technological parameters for magnetosensitive transistors, Hall integrated elements, formed within the CMOS technology standards and the field Hall sensor based on the SOI technology as well as the characteristics of magnetic field concentrators have been presented.

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Self-heating effects and heat sink problems in lateral power SOI-MOSFET's have been studied. Using the process and device simulation TCAD tools the output characteristics and safe operation area have been simulated. It has been shown that the safe operation area limitations to higher extent are related with the structure self-heating than with the parasitic bipolar transistor turning on.

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To increase the functioning operating range of CMOS LSI, designed according to the radiation-resistant technology SOS, an increase of the breakdown voltages pf the N-channel MOS transistors is required. The results of the construction modernization and that one of the technological route of formation of N-MOS transistors with an improved breakdown voltage, obtained by means of the device-technological modeling TCAD Synopsys, have been presented.

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The principal embodiments of implementing the circuit of serial access to flash-memory have been considered. The advantages and drawbacks of existing solutions have been analyzed. A new option of the circuit of serial access to flash-memory with eliminating the lacks inherent in the existing solutions has been presented.

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The charge distribution in the environment of CMOS-nanostructure has been investigated using TCAD-modeling.

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The method for reducing speed of the thermo drift of a probe relative to the sample has been developed. The method works together with the known methods of the thermo drift speed reduction. The method is based on the temperature stabilization of the electronic control system and the data read-out.

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