Self-heating effects and heat sink problems in lateral power SOI-MOSFET's have been studied. Using the process and device simulation TCAD tools the output characteristics and safe operation area have been simulated. It has been shown that the safe operation area limitations to higher extent are related with the structure self-heating than with the parasitic bipolar transistor turning on.
Yury A. Chaplygin
National Research University of Electronic Technology, Moscow, Russia
1. Material and process limits in silicon VLSI technology / J.D.Plummer et al. // Proc. of the IEEE. - 2001. - Vol. 89, N 3. - P. 240-258.
2. Measurement and Modeling of Self-Heating in SOI NMOSFET's / L.T.Su, J.E.Chung, D.A.Antoniadis et al. // IEEE transactions on electron devices. - 1994. - Vol. 41, N 1, January. - P. 69-75.
3. Efficiency of SOI-Like structures for reducing the thermal resistance in thin-film SOI power LDMOSFETs / J.Roig, J.Urresti, I.Cortes et al. // IEEE electron device letters. - 2004. - Vol. 25, N 11. -P. 743-745.
4. Fiorenza G., Antoniadis A., Jesus A. del Alamo. RF Power LDMOSFET on SOI // IEEE electron device letters. - 2001. -Vol. 22, N 3. - P. 139-141.
5. Fiorenza G., Antoniadis A., Jesus A. del Alamo. Experimental comparison of RF power LDMOSFETs on thinfilm SOI and bulk silicon // IEEE transactions on electron devices. - 2002. - Vol. 49, N 4. - P. 687-692.
6. S.Matsumoto et al. A new high performance lateral insulated gate bipolar transistor formed on quasi-SOI // IEEE electron device letters. - 1995. - Vol. 16, N 9. - P. 402-404.
7. The partial siliconon-insulator technology for RF power LDMOSFET devices and on-chip microinductors / Ren Changhong et al. // IEEE transactions on electron devices. - 2002. - Vol. 49, N 12. - P. 2271-2278.
8. Study of novel techniques for reducing self-heating effects in SOI power LDMOS / J.Roig, D.Flores, M.Hidalgo et al. // Solid State Electronics. - 2002. - Vol. 46, N 12. - P. 2123-2133.
9. Efficiency of SOI-like structure for reducing the thermal resistance in thin-film SOI POWER LDMOSFETs / J.Roig et al. // IEEE electron device letters. - 2004. -Vol. 25, N 11. - P. 743-745.
10. Воронин П.А. Силовые полупроводниковые ключи. - М.: Издательский дом Додэка-XXI, 2001. - 384 с.