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The implementation of an effective system of device and process simulation (TCAD) is currently one of essential components of ensuring technological self-sufficiency in microelectronics design and manufacturing. This problem solution includes creation of domestic TCAD tools and of a system of recommended practices and techniques for device and process simulation adjusted to the specific needs of manufacturing enterprises with account for available level of domestic technologies. In this work, the possibilities of existing CAD tools for device and process simulation are analyzed. The specifics of TCAD simulation of the process routes and devices currently available for fabrication on the domestic microelectronic enterprises, in particular, for technological routes for IC elements formation based on low-voltage CMOS devices, BIT devices, planar and vertical power MOSFETs and integrated magnetic field converters are given. The characteristics of developed software modules as a part of the domestic TCAD tool – mod-ules for process and device simulation and TCAD results visualizing – are presented. It has been demonstrated that these software modules allow for two-dimensional technological and device modeling for silicon CMOS and BCD technologies with 130 nm design rule and higher.

Key words: IC elements, device and process simulation, CAD, domestic microelectronic technologies
Published in: CIRCUIT ENGINEERING AND DESIGN
Bibliography link: Chaplygin Yu. A., Krasukov А. Yu., Krupkina Т. Yu., Balashov А. G., Losev V. V. Development of domestic CAD system for instrument-technological modeling for microelec-tronic technologies. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(5):607–617. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-5-607-617.

Anton Yu. Krasukov
National Research University of Electronic Technology, (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Tatiana Yu. Krupkina
National Research University of Electronic Technology, (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Alexander G. Balashov
National Research University of Electronic Technology, (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Vladimir V. Losev
National Research University of Electronic Technology, (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

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Information about the publication

UDK: 621.3.049.77
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2025-30-5-607-617
RISC id: ZKNZEE

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