Persons

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The SOI field-effect Hall sensors are characterized by the enhanced functionality, but by low magnetic sensitivity. Therefore, the main task is to increase the magnetic sensitivity of such sensors. The results of the study on magnetically sensitive electric characteristics of SOI FEHS, obtained using the TCAD system, have been presented. The three-dimensional modeling of the device has been carried out. The calculated Hall-gate characteristics of SOI FEHS, confirming the previously proposed physical model of the sensor, in accordance with which under certain conditions of SOI FEHS functioning the area of the increased magnetic sensitivity appears, have been obtained. The influence of the doping concentration in the sensor channel on the magnetic sensitivity has been studied. It has been shown that the magnetic sensitivity of SOI FEHS is 3 times increased at the concentration of 10 cm. The extended dynamic range of the increased magnetic sensitivity area (more than 5 V) permits to increase the area of practical application of the sensor increasing the noise immunity. The obtained SOI FEHS characteristics are in good agreement with the parameters of the experimental device published earlier.

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For multi-factor analysis of instrument characteristics of the field-effect Hall sensor on the SOI structure (SOI FEHS), by means of the TCAD simulation, the calculation of the output and transfer characteristics of SOI FEHS) two-dimensional model has been performed. The two-dimensional distributions of electrons of electric field and the current density in the SOI FEHS channel have been obtained in three typical modes of the sensor operation - full depletion, partial depletion and saturation. The obtained results are in good agreement with the experimental data and confirm the physical model of SOI FEHS, described above, and specific features of the instrument operation in the partial depletion region, when the conductive channel in SOI FEHS body is formed.

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The process and device simulation tools features have been analyzed. The tools have been analyzed applied to the calculation of electrical characteristics for various integrated circuit devices, operating in different external conditions. The model features having the maximum effect on the simulation results have been revealed.

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Some specific features of the device-technological simulation have been considered. The results of the simulation and optimization of the integrated magnetosensitive elements as a part of micro- and nanosystems have been considered. The results of the simulation and optimization of the constructive -technological parameters for magnetosensitive transistors, Hall integrated elements, formed within the CMOS technology standards and the field Hall sensor based on the SOI technology as well as the characteristics of magnetic field concentrators have been presented.

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Self-heating effects and heat sink problems in lateral power SOI-MOSFET's have been studied. Using the process and device simulation TCAD tools the output characteristics and safe operation area have been simulated. It has been shown that the safe operation area limitations to higher extent are related with the structure self-heating than with the parasitic bipolar transistor turning on.

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The lateral junctionless MOSFET’s have a number of advantages compared to the conventional devices based on SOI structure. During the process of fabricating SOI structure and further technological operations of fabricating transistors, the change of the silicon film thickness is possible. In the work, using the device-technological modeling in the TCAD system the results of the studies on the influence of the SOI structure silicon film thickness on the main JLT parameters have been presented. It has been shown that to compensate the degradation of the device characteristics while changing the silicon film thickness it is necessary, respectively, to change the impurity concentration in silicon. For this, with the silicon film thicknesses less than 45 nm the level of the silicon film doping by the impurity higher than 10 cm is necessary.

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