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Articles

Electronic engineering materials

  • Two methods of the accounting of randomness of inclusions’ form for calculation of effective permittivity tensor of the textured heterogeneous medium of matrix type with inclusions of a casual ellipsoidal form have been offered: an analytical method ...

Authors: Marina I. Zavgorodnyaya, Igor V. Lavrov
565 - 575
  • The galvanomagnetic Van der Pau measurements have been carried out on monocrystalline Cd HgTe (MCT) samples and epitaxial Cd HgTe/ CdZn Te (MCT/CZT) heterostructures ( x » 0,2) at T = 295 K and T = 77 K. The sample along with the cryostat rotated ...

Authors: Vadim A. Golubyatnikov, Aleksandr P. Lysenko, Aleksandr G. Belov, Vladimir E. Kanevsky
576 - 581

Micro- and nanoelectronics technology

  • Some features of the 3D silicon structures formation by locally formation of porous silicon as a sacrificial layer have been studied. It has been formed by metal-assisted chemical etching of a single crystal wafer of Si with silver films (50 and 100 ...

Authors: Olga V. Pyatilova, Artem V. Sysa, Sergey A. Gavrilov, Larisa V. Yakimova, Alexander A. Pavlov , Alexey N. Belov, Aleksandr A. Raskin
582 - 590
  • The techniques for forming the nanoscale elements of gate of the power microwave transistor, based on the AlN/GaN heterostructures, have been developed. The optimal parameters of exposure of 950-polymethylmethacrylate (PMMA) and ELP-20 have been defi...

Authors: Kirill K. Lavrentyev, Vladimir K. Nevolin, Roman Yu. Rozanov, Konstantin A. Tsarik , Alexey A. Zaitsev
591 - 597

Microelectronic devices and systems

  • To explain the current dependencies of the mean square of the low-frequency noise of green InGaN light emitting diodes, the double stage low-frequency noise equivalent circuit of LED has been offered. It has been shown that the non-monotonic dependen...

Authors: Viacheslav A. Sergeev, Ilya V. Frolov , Aleksey A. Shirokov
598 - 606
  • Using the methods of finite elements and conformal mappings the analytical models of the low resistance film resistors of the main types of comb (interdigital) structures with arbitrary relations of the specific resistances of resistive and conductiv...

Authors: Viktor D. Sadkov, Aleksandr V. Lopatkin
607 - 615

CIRCUIT ENGINEERING AND DESIGN

  • The results of the implementation of the accelerated SPICE-simulation method applied to the account of the tunneling effects in nanometer MOSFET have been presented. It has been shown that the replacement of complex models of these effects by tabular...

Authors: Vladimir A. Bachmanov, Igor V. Zabolotnov, Alexander V. Lapin
616 - 624

Information technologies

  • A digital synthesizer of a harmonic wave with direct calculation of the harmonic function from the phase based on CORDIC-algorithm has been considered. The algorithm of the synthesizer and the architecture of its implementation, which does not requir...

Authors: Viktor I. Djigan, Anton I. Smekalov
625 - 633
  • The characteristics of the known IP-cores of the Fast Fourier transform module as well as its basic building blocks have been analyzed. The problems of creating a fully independent platform HDL-description of this module for the FPGA-based, semicusto...

Authors: Aleksey L. Pereverzev , Aleksandr M. Silantyev
634 - 643

Brief reports

  • The simulation of the primary gas flow rate converter of membrane type based on the operation calorimetric principle has been carried out. Several options of the sensor construction have been considered. The results of numerical modeling for differen...

Authors: Mikhail A. Korolev , Maksim V. Kateev, Evgeniy E. Gusev
644 - 747
  • An electro-thermal modeling of modern SiGe and Si bipolar transistor structures using TCAD Sentaurus Synopsys has been carried out. It has been shown that for SiGe heterojunction bipolar transistors, operating at high current density, the internal te...

Authors: Maksim V. Kozhukhov
648 - 651
  • The problem of choosing the modulator structural circuit in designing delta sigma ADC, intended for multistandard processing, has been considered. An approach to creation of the modulator architecture and to revealing the restrictions related to the ...

Authors: Valeri P. Timoshenkov, Viktor A. Vankov, Konstantin S. Starodubtsev
652 - 655

2 стр. обложки - 

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