An electro-thermal modeling of modern SiGe and Si bipolar transistor structures using TCAD Sentaurus Synopsys has been carried out. It has been shown that for SiGe heterojunction bipolar transistors, operating at high current density, the internal temperature is higher than for identical Si transistors. As a result a stronger degradation of the device parameters and electrical characteristics is observed.
Maksim V. Kozhukhov
National Research University of Higher School of Economics Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Moscow
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