The results of the implementation of the accelerated SPICE-simulation method applied to the account of the tunneling effects in nanometer MOSFET have been presented. It has been shown that the replacement of complex models of these effects by tabular representation significantly accelerates simulation of the circuits containing these transistors.
1. Денисенко В.В. Новые физические эффекты в нанометровых МОП-транзисторах // Компоненты и технологии. – 2009. – №12. – С. 157–162.
2. Prabhakar V.S.V., Lal Kishore K. Device Modeling Solutions to Reduce GIDL Current in Low Power VLSI Circuits // International J. of Electrical, Electronics and Data Communica-tion. – 2013. – Vol. 1. – Iss. 9. –
P. 21.
3. Денисенко В.В. Компактные модели МОП-транзисторов для SPICE в микро- и наноэлектронике. –
М.: Физматлит, 2010. – 408 с.
4. Model definition of MOS model 11, level 1102. NXP Semiconductors, July 2011.