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Articles

ELECTRONICS MATERIALS

  • Polymer compositions with high electro-physical properties compatible with fillers of various natures, including metal-containing compounds, are required for microelectronics. Preparation of new copper-containing polymer compositions based on polyimi...

Authors: Valentina D. Kravtsova, Mayra B. Umerzakova, Natalia E. Korobova, Denis V. Vertyanov
509 - 517
  • At present, the halkogenide semiconductors based on the Ge-Sb-Te system materials are actively used due to their successful application in the optical phase change memory and the perspectives of the application in the electric phase change memory. Th...

Authors: Dmitry Y. Terekhov, Sergey A. Filatov, Alexey V. Babich, Dmitry V. Pepelyaev, Anna A. Presnukhina
518 - 527

Technological processes and routes

  • Currently, there are a lot of the methods for structuring the luminophore coatings and screens, however, the studies, oriented to a search for more technological methods of structuring, are being conducted. Based on literary sources, a comparative an...

Authors: Dmitry A. Suponnikov, Andrei N. Putilin, Anatoly A. Barinov
528 - 545
  • The CMOS SOI technology is perspective for creating variety nomenclature of radio-frequency (RF) analog-digital transceiver integrated circuits, including hardware. Testing results of designing and studies for the library RF elements and the set of t...

Authors: Nikolay A. Usachev , Vadim V. Elesin , Galina N. Nazarova , Denis I. Sotskov , Alexander Y. Nikiforov, George V. Chukov , Igor O. Metelkin, Nikita M. Zhidkov, Vladislav A. Dmitriev, Andrey V. Seletskij , Nikolai A. Shelepin
546 - 558

INTEGRATED ELECTRONICS ELEMENTS

  • The most important parameter of the LED heterostructures is the value of the external quantum efficiency. However, for the structures used in the manufacture of crystals for blue and white LEDs there is one more requirement: the wavelemgth maximum of...

Authors: Evgeny N. Vigdorovich
559 - 568
  • One of the base technologies in manufacturing of digital, analog and radio frequency VLSI and systems on sub-100 nm crystal is the CMOS technology with high-k under-gate dielectric. In present paper the effect of the ionizing radiation on n-channel 4...

Authors: Dmitriy A. Popov, Dmitriy V. Bykov
569 - 581
  • The development of the devices based on gallium nitride has become the priority direction, reflecting the world trends in the development of the microwave electronics. The use of the nanoheterostructures based on GaN for creating monolithic integrate...

Authors: Sergey A. Gamkrelidze, Pyotr P. Maltsev, Yuri V. Fedorov
582 - 588
  • The important factor, determining the functional properties, the limiting modes of operation and reliability of hetero-transient LEDs with the high-Ohm substrate is an account of heat release in it. A nonlinear thermoelectric model of InGaN/LED, taki...

Authors: Viacheslav A. Sergeev, Alexander M. Khodakov
589 - 595

Brief reports

  • The thermomagnetic recording on thin films is currently one of the most perspective methods for copying records with high density and weak residual magnetization, for example, in forensics. The technology of thermomagnetic recording is in demand to i...

Authors: Yury E. Vysokikh, Sergey Yu. Krasnoborodko , Vasily I. Shevyakov, Vladimir N. Berzhansky, Tatyana V. Mikhailova, Alexander N. Shaposhnikov, Anatoly R. Prokopov, Alexander S. Nedviga
596 - 601
  • There is no single concept, in terms of optimizing the diagnostic characteristics of the X-ray detector, to sel ect the photocell size. The reduction of the photocell size allows an improvement of the diagnostic quality, in its turn, providing a suff...

Authors: Zaur G. Zhgunev, Elena A. Tatarinova, Anatoly R. Dabagov
602 - 607

Conferences

608 - 
609 - 610

Jubilees

611 - 613

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