The important factor, determining the functional properties, the limiting modes of operation and reliability of hetero-transient LEDs with the high-Ohm substrate is an account of heat release in it. A nonlinear thermoelectric model of InGaN/LED, taking into account the Joule heat release in the semiconductor substrate has been presented. The distribution of the potential on the elements of the structure and the current dependence of the thermal resistance of the semiconductor device structure have been obtained. The model adequacy has been confirmed by comparison of the calculated and experimental dependences of the thermal resistance of the powerful LED structure on the total current. The presented heat-electric model of LED diode accounting the Joule heat release permits to calculate its thermal resistance. The adequacy of the developed model has been experimentally verified.
Alexander M. Khodakov
Ulyanovsk Branch of Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia
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