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Articles

FUNDAMENTAL RESEARCHES

  • The new types of the Stonely waves, which can be applied in the integrated electronics, have been theoretically studied. It has been determined that along the interface of the contact between two isotropic elastic mediums four types of waves with dif...

Authors: Arnold K. Morocha, Alekcandr S. Rozhkov
493 - 502

Electronic engineering materials

  • The results of the study on the structural perfection of the layers of the heterostrucrure GaN/GaInN/AlO and the impact of the defects on the characteristics of the emitter based on them have been presented. To determine the defectiveness of the laye...

Authors: Evgeny N. Vigdorovich, Ivan G. Ermoshin
503 - 509
  • The experimental data of the submicron periodic structures that are due to the laser radiation in air in a liquid medium (distilled water) on the surface of the polycrystalline nickel formed have been presented. By the electron microscopy methods the...

Authors: Boris B. Kostishko, Vyacheslav V. Svetukhin , Igor O. Yavtushenko
510 - 514
  • The specific features of the diamond structure and its interaction with the gas phase carbon atoms have been considered. The cause of the sequence of the c-C crystal three-layer structure has been revealed. It has been shown that the process of formi...

Authors: Stepan A. Neoustroev
515 - 519

Micro- and nanoelectronics technology

  • The results of studies on the film composites, based on polyvinylidene fluoride with the carbon nanotubes, by the dielectric relaxation spectroscopy have been presented. For the composite samples with the content of nanotubes exceeding 0.5 wt% the no...

Authors: Aleksandr V. Solnyshkin, Inna L. Kislova, Alexey N. Belov, Artem V. Sysa, Anton A. Stroganov, Vasily I. Shevyakov, Maksim V. Silibin, Anastasiya A. Mihalchan, Aleksandr A. Lysenko
520 - 528
  • The results of experimental studies of modes of ion beam included deposition of Pt with thickness from (0.48 ± 0.1) to (17.38 ± 0.1) nm by focused ion beams have been represented. The experimentally determined rate of ion-induced deposition of Pt, wh...

Authors: Sergey A. Lisitsyn, , Oleg I. Ilin, Marina V. Ilina, Boris G. Konoplev , Aleksandr V. Bykov, Oleg A. Ageev
529 - 536
  • The physical and chemical properties of gallium and its role in modern microelectronics have been described. The up-to-date methods of purifying gallium from impurities and recycling of the waste treatment have been presented. A scheme for processing...

Authors: Vladimir B. Koltsov , Nikolay M. Larionov, Sergey A. Slesarev, Tanzila A. Barkinkhoeva
537 - 542
  • The kinetic model of the surface molecular contamination, formed as a result of two-dimensional nucleation, has been investigated. The solutions to describe the structural characteristics of the growing pollution through a system of physical constant...

Authors: Elena A. Sevryukova
543 - 550

Microelectronic devices and systems

  • The influence of many factors on the electronic transport in organic semiconductor systems in conditions of the time-spacing experiment has been studied. For estimating the influence on the photo current kinetics of such factors, as the density state...

Authors: Ekaterina V. Morozova, Vadim V. Shulezhko
551 - 556

Information technologies

  • The cellular automata formulations of the algorithm for sorting arrays of characters and strings, not available in literature of recent decades, have been presented. For the first time, the cellular automation, that multiplies two integers written in...

Authors: Igor V. Matyushkin , Anton V. Zhemerikin, Mariya A. Zapletina
557 - 565
  • The methods of allocating images by the invariant function of the moments, the organization of the hierarchical agglomerative algorithms, intermediate and main moments of inertia have been considered. The synthesis of the method for chain coding the ...

Authors: Win Htet Zaw, Victor D. Koldaev
566 - 573

INTEGRATED RADIOELECTRONIC DEVICES

  • The peculiarities of the hardware implementation of the digital signal synthesizers applied to two radar systems - the moving-target indication system in the Pulse-Doppler radar and the target detection system in the chirp radar - have been investiga...

Authors: , Sergey P. Romanov
574 - 582

Brief reports

  • To increase the functioning operating range of CMOS LSI, designed according to the radiation-resistant technology SOS, an increase of the breakdown voltages pf the N-channel MOS transistors is required. The results of the construction modernization a...

Authors: Andrej V. Solov'ev, Tatyana Yu. Krupkina, Aleksandr A. Romanov
583 - 585
  • The main variants of simulation transistors with a floating gate have been reviewed. A new method for modeling the analog transistor with a floating gate, taking into account a discrete spectrum of the charge state on the floating gate has been prese...

Authors: Sergey S. Kartashev, Vladimir V. Losev
586 - 588
  • The mathematical model of the gamma-percentile operating life of the optical cables, taking into account the dependency of the constructive-technological parameters, regimes and conditions of their application, has been considered. The possibility of...

Authors: Valery V. Zhadnov , Ilya A. Ivanov, Pavel S. Korolev, Sergey N. Polesskiy
589 - 592

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Authors:
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Jubilees

594 - 595
596 - 597

3 стр. обложки - 
598 - 602

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