The results of experimental studies of modes of ion beam included deposition of Pt with thickness from (0.48 ± 0.1) to (17.38 ± 0.1) nm by focused ion beams have been represented. The experimentally determined rate of ion-induced deposition of Pt, which, depending on process parameters of the focused ion beam is changed from (0.28 ± 0.02) to (6.7 ± 0.5) nm/s. It has been found that the deviation of the lateral dimensions of Pt nanostructures from the designed pattern decreases from (29.3 ± 0.07) % to (2.4 ± 0.2) % for the various modes of deposition time. It has been shown that at the thicknesses of Pt nanostructures over 3 nm their resistivity is (23.4 ± 1.8) Om∙cm and weakly depends on the thickness of the structure. The results can be used to develop processes of formation of nanostructures for microelectronics, nano- and microsystems technology on the basis of the focused ion beams method.
1. Giannuzzi L.A., Stevie F.A. Introdution to focused ion beams: instrumentation, theory, techniques and practice. N.Y.: Springer, 2004. 357 p.
2. Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of a Ga+ ions / I.I. Bobrinetskii, A.V. Volkova, A.A. Zaitsev et al. // Russian Microelectronics. 2015. Vol.7. Iss. 44. P. 482486.
3. Development of new metamaterials for advanced element base of micro- and nanoelectronics, and microsystem devices. Chapter In: Advanced Materials – Manufacturing, Physics, Mechanics and Applications / O.A. Ageev, S.V. Balakirev, Al.V. Bykov et al. / Eds. Parinov, Chang, Topolov. Springer International Publishing Switzerland, 2016. – P. 563580.
4. Лучинин В.В. Нанотехнологии: физика, процессы, диагностика, приборы. М.: Физматлит, 2006. 552 с.
5. Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods / V.I. Avilov, O.A. Ageev , A.S. Kolomiitsev et al. // Semiconductors. 2014. Vol. 48. N 13. P. 17571762.
6. Utke I., Hoffmann P., Melngailis J. Gas-assisted focused electron beam and ion beam processing and fabrication / Journal of Vacuum Science & Technology B. 2008. Vol. 26. P. 11971276.
7. Fu Y., Bryan N., Shing O., Hung N. Influence of the redeposition effect for focused ion beam 3D micromachining in silicon // International Journal of Advance Manufacturing Technology. 2000. №16. P. 877–880.
8. Konoplev B.G., Ageev O.A., Kolomiitsev A.S. Formation of Nanosize Structures on a Silicon Substrate by Method of Focused Ion Beams // Semiconductors. 2011. Vol. 45. No 13. P. 17091712.
9. Fabrication of advanced probes for atomic force microscopy using focused ion beam / O.A. Ageev, A.S. Kolomiytsev, A.V. Bykov et al. // Microelectronics Reliability. – 2015. – №55. – Р. 2131–2134.
10. Формирование наноразмерных элементов затворов СВЧ-транзисторов методом ионно-лучевой литографии / К.К. Лаврентьев, В.К. Неволин, Р.Ю. Розанов и др. // Изв. вузов. Электроника. Т. 20. №6. 2015. С. 591597.
11. Analysis of modes nanoscale profiling during ion-stimulated deposition of W and Pt using the method of focused ion beams / O.A. Ageev, A.V. Vnukova, A.L. Gromov et al. // Nanotechnologies in Russia. 2014. Vol. 9. Iss. 34. P. 145150.
12. Studying the resolving power of nanosized profiling using focused ion beam / O.A. Ageev, A.M. Alekseev, A.V. Vnukova et al. // Nanotechnologies in Russia. 2014. Vol. 9. Iss. 12. P. 2630.
13. Bochenkov V.E., Sergeev G.B. Sensitivity, Selectivity, and Stability of Gas–Sensitive Metal–Oxide Nanostructures // Metal Oxide Nanostructures and Their application. 2010. – Vol. 3 – P. 31–52.
14. Kalinin S., Gruverman A. Electrical and electromechanical phenomena at the nanoscale // Handbook of Nanotechnology. – Springer, 2007. P. 31–49
15. E.S. Sadki, S. Ooi, K. Hirata. Focused-ion-beam-induced deposition of superconducting nanowires // Appl. Phys. Lett. 2004. Vol. 85. N 25. – P. 6206–6208.