Simulation of Transient Current in Nonhomogeneous Organic Semiconductor Systems

Simulation of Transient Current in Nonhomogeneous Organic Semiconductor Systems

The influence of many factors on the electronic transport in organic semiconductor systems in conditions of the time-spacing experiment has been studied. For estimating the influence on the photo current kinetics of such factors, as the density states, the morphology of the percolation regions, the existence of defect layers , the nonhomogeneity of electric field, etc., the efficient Monte-Carlo algorithm, based on the interpretation of transient current as a density of the generalized random recovery process, has been applied. The test calculations for some multilayer structures have been made.
Ekaterina V. Morozova
Ulyanovsk State University, Ulyanovsk, Russia; SMС “Technological Centre”, Moscow, Russia
Vadim V. Shulezhko
Ulyanovsk State University, Ulyanovsk, Russia
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