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Articles

FUNDAMENTAL RESEARCHES

  • The nature of the excitons bands, prevailing in the ZnS(O) and ZnSe(O) luminescence spectra at 300 K and high excitation density, has been investigated. The existence of bound excitons on oxygen Sa and SAL complexes has been determined. The bound ene...

Authors: Nataliya K. Morozova, Daniel Alejandro Mideros Mora
3 - 9

Electronic engineering materials

  • The problems in production of polycrystalline silicon for solar cells at present and in the nearest future have been considered. New progressive technologies, already realized in the pilot-scale production, as well as the recent original developments...

Authors: Boris G. Gribov , Konstantin V. Zinoviev
10 - 17
  • The mechanism of GaN crystallization from the gas phase has been analyzed from the standpoint of the Gibbs's classical thermodynamics. In the investigation of forming the neutral complexes of the acceptor impurities with oxygen the main statements of...

Authors: Evgeny N. Vigdorovich
18 - 25
  • The structure of the crystals of the (B, Al, Ga, In, Tl) metals nitrides has been presented by the closed-up tetrahedrons so that the «nitrogen» tetrahedron includes the apex of the «metal» one, and the «metal» one that one of the «nitrogen» tetrahed...

Authors: Stepan A. Neoustroev
26 - 31

Microelectronic devices and systems

  • The dependence of the dynamic range upper boundary has been investigated with respect to linearity and noise characteristics of the HEMT transistors with the direct structure on the geometrical parameters has been investigated. An optimization of the...

Authors: Anatoliy M. Bobreshov, Igor V. Hrebtov, Mikhail P. Raypolov
32 - 37
  • The analysis and the numerical calculation of the photorelaxation processes and spectral characteristics of photosensitivity of n- and p-type regions of the three-diode vertical integrated photocell have been performed. The dependencies of the photor...

Authors: Vladimir I. Khainovskii, Elena A. lgnatjeva, Valerii V. Uzdovskii
38 - 44
  • The influence of the constructive-technological factors on the parameters of lateral LDMOSFET transistors has been investigated. The results of simulation of the lateral LDMOSFET transistors have been presented.

Authors: Valeriy Y. Niskov, Sergey N. Zolotarev, Andrey N. Gashkov
45 - 51
  • The model, that describes the physical processes, accompanying the interaction of heavy charged particles with the ionizing radiation semiconductor detector, has been proposed. The problem of optimization of electric-physical characteristics and of t...

Authors: Leonid V. Katsoev, Valeriy V. Katsoev, Eduard A. Ilichev
52 - 57
  • Based on the avalanche diode theoretical model, reflecting not only the avalanche multiplication of charge carriers but also, the processes proceeding in the diode interval under the condition of its irradiation by optical beam, the avalanche diode i...

Authors: Yuriy I. Alekseev, Aleksandr V. Dem’yanenko
58 - 62

Nanotechnologies

  • The technique of forming the periodical lengthy (up to 30 μm) nanometer layers with 70 nm cross-section and 2-3 nm depths has been developed. The etching velocity of gallium ions, accelerated by 30 kV voltages of such materials as GaAs, AlGaN, Al and...

Authors: Konstantin A. Tsarik , Viktor V. Losev , Sergey V. Barash
63 - 67

Information technologies

  • The method of formalization of the information systems integration processes has been proposed. This method is based on the description of their interaction processes using the set theory. As the integration the process of combining the information b...

Authors: Sergey A. Loopin, Evgeniya V. Sherina, Natalya Yu. Ponomareva
68 - 76
  • The method of the fetal-heart rate determination by the «beat-to-beat» principle, based on the fetal-heart rate calculation by determining the length of the time interval between two subsequent beats, has been proposed.

Authors: Kirill I. Avtushenko
77 - 80
  • The methods of automated analytical processing of documentary information in the knowledge bases of decision support systems have been offered. The ways of estimating the document correspondence to the adjusted data domain have been developed.

Authors: Valentin V. Sliusar, Aleksandr M. Bain, So Tant
81 - 84

Measurement methods and technics

  • The electron microscopy investigations of the texturing arrays of nanosized crystals are not concerned with the constraints arising during the electron diffraction studies of textures (EDST) of the arrays of micron crystals in the column of an electr...

Authors: Sergey K. Maksimov
85 - 94

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