The mechanism of GaN crystallization from the gas phase has been analyzed from the standpoint of the Gibbs's classical thermodynamics. In the investigation of forming the neutral complexes of the acceptor impurities with oxygen the main statements of the Reiss and Debye-Huchel's theory have been used. Based on the analysis of the inter-molecular interaction the instability regions in the GaN - InN amd GaN - AIN systems have been revealed. For the MOS-hydride technology the dependencies of variation of the crystallizing solid solution compositions on the vapor-gas phase composition have been determined.
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