The technique of forming the periodical lengthy (up to 30 μm) nanometer layers with 70 nm cross-section and 2-3 nm depths has been developed. The etching velocity of gallium ions, accelerated by 30 kV voltages of such materials as GaAs, AlGaN, Al and Si, used for creation of acoustic-electron transducers, has been measured. The possibility of polishing the AlGaN surface by ion beam up to 0,5-0,7 nm roughness levels has been demonstrated.
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