Proceedings of universities. Electronics Electronics home

Vol 24 №2

Electronics
Archives
Vol 24 №2

Contents

Turn

ectronics materials

The Dependence of Surface Morphology and Structure of CuInGaSe Films on Selenization Temperature

Authors: Gadzhiev T.M., Aliev M.A., Asvarov A.Sh., Riza M. Gadgieva, Bilalov B.A., Ismailov A.M., Shomakhov Z.V.

107 - 117

The Formation of Low Resistivity Layers of -type in Heterostructure GaAlN/GaN

Authors: Vigdorovich E.N.

118 - 128

Spectrophotometric Monitoring Chloride Electrolyte for Electrochemical Deposition of Permalloy

Authors: Tikhonov R.D., Polomoshnov S.A., Kostyuk D.V.

129 - 136

Integrated electronics elements

Charge Properties of a MOS Transistor Structure with a Channel Made of a Two-Dimensional Crystal

Authors: Makovskaya T.I., Danilyuk A.L., Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E.

137 - 150

Investigation of Influence of Temperature on Output Parameters of Nuclear Power Sources of Electric Supply Based on Double Step Conversion of Radioactive Decay Energy

Authors: Novikov S.G., Berintsev A.V., Alekseev A.S., Somov A.I., Svetukhin V.V.

151 - 159

Precession of Spin-Valve Free Layer Magnetization and Its Switching Under Influence of a Magnetic Field Perpendicular to Axis of Anisotropy

Authors: Iusipova Iu.A.

160 - 173

Highlights of JFET I-V Characteristics Simulation in Cryogenic Temperature Range

Authors: Petrosyants K.O., Ismail-Zade M.R., Sambursky L.M.

174 - 184

Synthesis of 249KP4AT MOS-Relay SPICE-Model with the Temperature Dependence of Parameters

Authors: Ozerkin D.V., Babeshko V.V.

185 - 196

Research and Modification of a Multi-Bit Parallel-Prefix Adder

Authors: Yakunin A.N., Aung Myo San

197 - 207