Depending on the choice of technology for manufacturing the CuIn GaSe films the scattering of electrical-and photoelectrical of the photo converters parameters is observed, which in the first turn is related to the microstructure formed in the films and their phase composition. The study on the phase division processes and the formation of the one-phase film CuIn GaSe is the key moment in manufacturing high quality absorbing layers. Thin films of CuInGaSe have been prepared by the two-step selenization of the preliminary synthesized Cu-In-Ga- layers of different thickness in a temperature interval 350 ≤ T ≤ 550 °C. The surface morphology, the chemical composition and the structure of the synthesized CuInGaSe films have been studied using the electron microscopy, the X-ray powder diffraction and the X-ray fluorescence methods. It has been determined that the synthesized films are polycrystalline, have developed surface and the crystalline medium size of 50-140 nm. The minimum initial selenization temperature and the minimum thickness of the metal layer, required to prepare CuInGaSe thin film, have been defined from the statistical analysis of the electron microscopy data.
Zamir V. Shomakhov
Kabardino-Balkarian State University, Nalchik, Russia; Kabardino-Balkarian Scientific Center of Russian Academy of Sciences, Nalchik, Russia
1. Schock H-W., Noufi R. Progress in Photovoltaic’s // Research and Applications. – 2000. – Vol. 8. – Iss. 1. – P. 151–160.
2. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7% / J. Philip, H. Dimitrios, W. Roland et al. // Phys. Status Solidi. – 2015. – Vol. 9. – Iss. 1. – P. 1–96.
3. Solar Frontier hits 22.3 % on CIGS Cell // Solar Frontier Press Release. – 2015. – URL: http://www.solar-frontier.com/eng/news/2015/C051171. html (дата обращения: 10.09.2018).
4. Солнечная фотовольтаика: современное состояние и тенденции развития / В.А. Миличко, А.С. Шалин, И.С. Мухин и др. // Успехи физических наук. – 2016. – Т. 186. – № 8. – С. 801–815.
5. Новиков Г.В., Гапанович М.В. Солнечные преобразователи третьего поко-ления на основе Cu-In-Ga-(S, Se) // Успехи физических наук. – 2017. – Т. 187. – № 2. – С. 173 – 191.
6. Билалов Б.А., Гаджиев Т.М., Сафаралиев Г.К. Способ получения тонкой пленки диселенида меди и индия CuInSe2 // Патент 2354006 RU, МПК H01L31/18/2009. Бюл. №12. – 5 с.
7. Вакуумная трубчатая печь / Т.М. Гаджиев, Р.М. Гаджиева, Р.К. Арсланов и др. // Патент 116614 RU, МПК F27B5/04/2012. Бюл. №15. – 5 с.
8. Устройство для натекания газа / Т.М. Гаджиев, И.Г. Зубаилов, Р.К. Арсланов и др. // Патент 168325 RU, МПК F17C 13/00. 2017. Бюл. №4. – 5 с.
9. Технология получения и оптическое поглощение пленок полупроводниковых растворов CuIn0,95Ga0,05Se2 / М.А. Алиев, С.Н. Каллаев, Т.М. Гаджиев и др. // Письма в ЖТФ. – 2016. – Т. 42. – № 14. – С. 1–6.
10. Holzwarth U., Gibson N. The Scherrer equation versus the 'Debye-Scherrer equation' // Nature Nanotechnology. – 2011. – Vol. 6. – P. 534.
11. Leon М., Merino J.M., Fernandez-Ruiz R. X-ray diffraction data and Rietveld refinement of CuGaxIn1–xSe2 (x = 0.15 and 0.50) // Friedrich.Powder Diffraction. – 2010. – Vol. 25. – Iss. 3. – P. 253–257.