Persons

The results of the experimental investigation of Ni-n-n+-In fabricated from the low-resistance ZnS:AI (n+-area) have been presented. A compensated high-resistance n-layer was obtained by thermodiffusion of Ag. The photodiodes have the injecting amplification of photo current at 1–10 V direct biases. The peculiarities of the dependence of current across diodes on the thickness of n-layer in darkness and in UV light have been revealed. The photosensitivity has the maximum in the narrow spectral range near the fundamental absorption.

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The technique of forming the periodical lengthy (up to 30 μm) nanometer layers with 70 nm cross-section and 2-3 nm depths has been developed. The etching velocity of gallium ions, accelerated by 30 kV voltages of such materials as GaAs, AlGaN, Al and Si, used for creation of acoustic-electron transducers, has been measured. The possibility of polishing the AlGaN surface by ion beam up to 0,5-0,7 nm roughness levels has been demonstrated.

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It has been shown that the presence of adsorbate on the measured surfaces in air changes the conditions of the capacitance technique applicability in the scanning probe microscopy and increases its resolution. The technique realization examples have been presented.

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