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The voltage-current (VC) and lux-current (LC) room temperature characteristics of high-ohmic CdTe (CT) and Cd1-YZnYTe (CZT) samples with various illumination intensities have been investigated. The dependencies of the short-circuit current and open-circuit voltage with light intensity, when the CT and CZT-samples were illuminated by 740-nanometer red color radiation, have been also investigated. It has been shown that the lux-current characteristics of zinc cadmium telluride sample depend on the applied voltage polarity; the voltage-current characteristics strongly depend on the light intensity and have peculiar fracture at the coordinate zero-point. It has been assumed that within the sample the introduced electric field due to the technological ingot growth and annealing conditions exists.
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The galvanomagnetic Van der Pau measurements have been carried out on monocrystalline Cd HgTe (MCT) samples and epitaxial Cd HgTe/ CdZn Te (MCT/CZT) heterostructures ( x » 0,2) at T = 295 K and T = 77 K. The sample along with the cryostat rotated in magnetic field of electromagnet by (0-360°) - angle with 6-degree step. Angular dependencies of measured signal for p -type monocrystalline sample at T = 77 K were shown to be sinusoidal, hence, Hall coefficient did not depend upon magnetic field induction. However, for epitaxial MCT/CZT- heterostructures at T = 77 K measured signal angular dependencies differed greatly from sinusoids.
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The influence of the illumination of the n-type semi-insulating gallium arsenide sample central part upon the sample conductivity has been investigated. The luxe-ampere dependence beginning from some light intensity has been shown to become linear, and its angular coefficient increased with illuminated area diameter increasing. This dependence has been described by the degree function between linear and square ones. The cut-off current dependence upon the illuminated area diameter has been shown to be superlinear. The qualitative model, explaining the observed experimental data, has been proposed.
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