The metal-induced recrystallization method is an urgent research task for creating the integrated circuits of multi-level architecture, sensitive elements of sensors as well as of the electronic micro- and nanosystems. In the work an optimized method of the metal-induced lateral recrystallization (MILC) of the nano-wire structures from amorphous silicon (a-Si) using nickel silicide has been presented. Based on the given method the nano-wire n-channel field transistors (Gate-All-Around) - MILC GAA transistors have been manufactured. Similar structures have been manufactured based on monocrystal silicon using SOI (SIMOX) structures have been made. The comparison between the electric characteristics of MILS GAA of field nanowire transistors based on recrystallized monocrystal silicon has been performed. It has been shown that the electric-physical characteristics of nano-wire MLC GAA transistors on recrystallized silicon are comparable with nanowire MILC transistors. Thus, the measured MILC G-AA - mobility of electrons in weak fields for MILC GAA of the transistor was 130 cm/V·s for MILC GAA transistor it was 200 cm/V·s.
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