Persons

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The metal-induced recrystallization method is an urgent research task for creating the integrated circuits of multi-level architecture, sensitive elements of sensors as well as of the electronic micro- and nanosystems. In the work an optimized method of the metal-induced lateral recrystallization (MILC) of the nano-wire structures from amorphous silicon (a-Si) using nickel silicide has been presented. Based on the given method the nano-wire n-channel field transistors (Gate-All-Around) - MILC GAA transistors have been manufactured. Similar structures have been manufactured based on monocrystal silicon using SOI (SIMOX) structures have been made. The comparison between the electric characteristics of MILS GAA of field nanowire transistors based on recrystallized monocrystal silicon has been performed. It has been shown that the electric-physical characteristics of nano-wire MLC GAA transistors on recrystallized silicon are comparable with nanowire MILC transistors. Thus, the measured MILC G-AA - mobility of electrons in weak fields for MILC GAA of the transistor was 130 cm/V·s for MILC GAA transistor it was 200 cm/V·s.

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During the analog signals processing one of the key factors is the reduction of power consumption with high accuracy of signal processing. One way of solving this problem is the implementation of analog IP-blocks. PLLs, AGC, modulators often include the analog signal multipliers. In the paper, the principle of quadratic function cell operation has been described in detail. The analog signal multiplier has been constructed on the basis of the difference of squares arithmetic formula and the considered cell of the quadratic current function. On the basis of the elements of 5529 series structured ASIC, the analog signal multiplier has been simulated and its accuracy has been assessed. The resulting analog complex functional IP-block for signal multiplication is a part of the development strategy for 5529 series structured ASIC library.

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