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The metal-induced recrystallization method is an urgent research task for creating the integrated circuits of multi-level architecture, sensitive elements of sensors as well as of the electronic micro- and nanosystems. In the work an optimized method of the metal-induced lateral recrystallization (MILC) of the nano-wire structures from amorphous silicon (a-Si) using nickel silicide has been presented. Based on the given method the nano-wire n-channel field transistors (Gate-All-Around) - MILC GAA transistors have been manufactured. Similar structures have been manufactured based on monocrystal silicon using SOI (SIMOX) structures have been made. The comparison between the electric characteristics of MILS GAA of field nanowire transistors based on recrystallized monocrystal silicon has been performed. It has been shown that the electric-physical characteristics of nano-wire MLC GAA transistors on recrystallized silicon are comparable with nanowire MILC transistors. Thus, the measured MILC G-AA - mobility of electrons in weak fields for MILC GAA of the transistor was 130 cm/V·s for MILC GAA transistor it was 200 cm/V·s.
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The promising tool for detecting the intermolecular interactions, including the biochemical interactions, is an ion-sensitive field effect transistor - ISFET. Using the ISFET the recognition of various mechanisms of the specifically adsorbed substances is possible. Also, ISFET is integrated with the CMOS technology, which opens the new perspectives in creation of the intellectual micro and nanosystems. In the work, the influence of the constructive-technological parameters of ISFET on the charge sensitivity has been described using the numerical simulation. The ISFET constructions based on a full depleted structure of silicon on insulator (SOI) with a floating gate have been presented. The constructions differ by the way of forming the contact liquid medium - gate. The analytical dependences of the charge sensitivity of ISFET have been obtained It has been shown that the limiting sensitivity is achievable on a composite structure with extremely small dimensions. The sensitivity of the considered construction of the ISFET-structure, designed by 1.2 µm norms with the analyte adsorbtion was 50 effective charges of electrons. The ISFET, designed with the submicron physical sizes (the wire width is 10 nm and length 100 nm), have sensitivity 1 - 2 electrons.
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