For calculation and constructing the devices of nanoelectronics and nanophotonics, in which graphenes and graphenes-like 2D nanoallotropes of carbon, silicon and binary compounds of АВ type are used, the knowledge of elastic characteristics and depen...
The metal-induced recrystallization method is an urgent research task for creating the integrated circuits of multi-level architecture, sensitive elements of sensors as well as of the electronic micro- and nanosystems. In the work an optimized method...
Anisotropic etching in KOH solution with electrochemical stopping is commonly used in formation of thin silicon membranes of sensitive elements in various MEMS devices. However, the data of investigating the process of electrochemical stop-etching of...
The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electr...
Placement stage is one of the most crucial and time-consuming stages of design flow in the basis of reconfigurable systems-on-chip (RSoC). In this work the analysis of various approaches to solving the elements’ placement in the topological synthesis...
Modern ventricular assist devices (VAD), the devices for mechanical replacement of the cardiac function represent complex biotechnological systems. In addition to implantable parts, such system includes the peripherals, which are represented by vario...
The efficiency of admixtures of rare-earth elements in silicon, an exhibition of the structures optical properties depends on the spectrum of optically and electrically active centers, containing rare-earth elements, their total concentration as well...
The options of constructing the multipath receiving antenna systems based on APAA have been considered. The criteria for the selection of emitters for antennas of different range and purpose have been presented. It has been shown that the use of the ...
GaN-transistors have a relatively high input resistance, which permits to design the broad-band chains of concordance, providing high efficiency and high output power. For efficient using the GaN-transistors as a part of the high power amplifier in p...
The effect of transistor capacitance on the frequency, gain and amplifier efficiency has been studied. It is known that the maximum frequency of an amplifier on HEMT decreases with a decrease in the gate-source and gate-drain capacitance. The effect ...