Persons

A relationship of the deposited material line width variation depending on the moving speed of the coordination stage and laser radiation energy has been determined. The technological conditions of removing clear defects have been established.

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The methods of repairing the integrated circuit layout defects on photomasks have been analyzed. The most effective methods for removal of the clear and opaque defects in manufacture of the photomasks for ICs with the standards of up to 90 nm modes have been revealed.

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The experience of applying the multiple-beam laser writer and the electron beam writer with a variable shape beam to form a hidden image of a topological structure of the integrated circuit on a photomask, using the technology, which provides the geometrical shape of the topological elements as close as possible to the project data, has been presented. The adequacy of the developed technology of producing precision photomasks has been fully supported by the results of the control in the manufacture of the photomasks mixed sets.

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