Persons

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The GaN based devices with respect to most parameters exceed the devices based on traditional semiconductor materials. The AlGaN-transistors are the devices, operating in the depletion mode. For most applications it is necessary to implement the operating mode E , when the current in the channel is closed at zero gate voltage. In this paper the novel method namely using the p -GaN layer under the gate has been considered. The plasma-chemical removal of p -GaN layer in the non-gated active region has been chosen as a formation method of this layer. In this case the challenges, namely the non-uniformity in the depth of etching and poor control of the etching rate, arise. To exclude these problems, the heterostructures with additional AlN barrier layer has been developed. The research results of the heterostructure parameters affecting the carrier concentration in the channel, and, respectively, the transistor output characteristics have been presented and the developed design process has been shown. According to it the normally-off transistors have been formed. The maximum drain current in the open state is 350 mA/mm at 4 V gate voltage and the breakdown voltage is about 550 V in closed state at 0 V gate voltage.

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The methods of repairing the integrated circuit layout defects on photomasks have been analyzed. The most effective methods for removal of the clear and opaque defects in manufacture of the photomasks for ICs with the standards of up to 90 nm modes have been revealed.

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The experience of applying the multiple-beam laser writer and the electron beam writer with a variable shape beam to form a hidden image of a topological structure of the integrated circuit on a photomask, using the technology, which provides the geometrical shape of the topological elements as close as possible to the project data, has been presented. The adequacy of the developed technology of producing precision photomasks has been fully supported by the results of the control in the manufacture of the photomasks mixed sets.

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