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During reactive magnetron sputtering in chemically active gas environment, formation of chemical species on the surface of target changes its sputtering rate. As a result, significant composition change of film being formed occurs in narrow pressure range of chemically active gas. Good reproducibility of fabrication cycle requires precise understanding of processes running in sputtering and high level of chemically active gas control. In this work, the process of Mo-Si-N-O thin films, used as phase-shifting layers of phototemplates, formation by magnetron sputtering is investigated. A theoretical-experimental approach is presented for predicting and controlling the composition of multicomponent thin films formed by reactive sputtering using two separate targets in a chemically active gas environment. Experimental results of Mo-Si-N-O thin films composition change depending on nitrogen pressure during simultaneous reactive magnetron sputtering of two targets, molybdenum and silicon, are given. The character of the Mo-Si-N-O films composition change is substantiated by simulation with consideration to kinetic theory of gases, geometrical characteristics of vacuum magnetron sputtering equipment and simple physical and chemical assumptions. It has been established that key factor determining the thin film composition is the process of targets nitridation that leads to a sharp change in the rate of their sputtering.

Key words: reactive magnetron sputtering, phase-shifting phototemplates, nitridation
Published in: ELECTRONICS MATERIALS
Bibliography link: Gromov D. G., Gavrilov S. A., Lebedev E. A., Silibin M. V., Dubkov S. V., Anikin A. V., Pogalov A. I., Dronova D. A., Butmanov D. D., Shiryaev M. E., Gromov V. D., Ryazanov R. M., Sharipov R. A., Bespalov V. A. Composition control of Mo-Si-N-O thin films during reactive magnetron sputtering. Proc. Univ. Electronics, 2023, vol. 28, no. 6, pp. 745–761. https://doi.org/ 10.24151/1561-5405-2023-28-6-745-761. – EDN: WRKMQW.
Financial source: the work has been performed under state assignment (Agreement FSMR-2023-0014).

Dmitry G. Gromov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; I. M. Sechenov First Moscow State Medical University of the Ministry of Health of the Russian Federation, Russia, 119435, Moscow, Bolshaya Pirogovskaya st., 2, bld. 4

Sergey A. Gavrilov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Egor A. Lebedev
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Maxim V. Silibin
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Sergey V. Dubkov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Andrey V. Anikin
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Anatoly I. Pogalov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Danil D. Butmanov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Vladislav D. Gromov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Roman M. Ryazanov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; SMC “Technological Centre”, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7

Rustem A. Sharipov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Vladimir A. Bespalov
MIET, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 539.231
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-6-745-761
RISC id: WRKMQW

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