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The calculation of the influence of the topological parameters of shunts in the cathode regions of the photothyristor on the dV / dt effect has been presented. The analytical condition, permitting in first approximation to determine in which region the structure switching will start due to dV / dt effect, has been obtained. This condition can be used in designing the photothyristors with the built-in protection against destruction during the uncontrolled turn on of the dV/dt effect. The high-voltage photothyristors in serial connection are applied, in particular, in the high-voltage direct current transmission lines. One of the main requirements for these devices is the availability of protection against overvoltage and dV/dt effect.

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