The calculation of the influence of the topological parameters of shunts in the cathode regions of the photothyristor on the dV / dt effect has been presented. The analytical condition, permitting in first approximation to determine in which region the structure switching will start due to dV / dt effect, has been obtained. This condition can be used in designing the photothyristors with the built-in protection against destruction during the uncontrolled turn on of the dV/dt effect. The high-voltage photothyristors in serial connection are applied, in particular, in the high-voltage direct current transmission lines. One of the main requirements for these devices is the availability of protection against overvoltage and dV/dt effect.
Denis S. Silkin
National Research University Higher School of Economics, Moscow, Russia
1. Блихер А. Физика тиристоров: пер. с англ. под ред. И.В. Грехова. – Л.: Энергоиздат. Ленингр. отд-ние, 1981. – 264 с.
2. Semiconductor Power Devices, Physics, Characteristics, Reliability / J. Lutz, H. Schlangenotto, U. Scheuermann, R. De Doncker. – Heidelberg: Springer, 2011. – 538 р.
3. Niedernostheide F.-J., Schulze H.-J. Kellner-Werdehausen U. Self-protection functions in direct light-triggered high-power thyristors // Microelectronics Journal. – 2001. – Vol. 32. – № 5–6. – P. 457–462.
4. Baliga B.J. Fundamentals of Power Semiconductor Devices. – N.Y.: Springer, 2008. – 1069 p.
5. Горячкин Ю.В. Разработка моделей трехмерных элементарных ячеек мощного импульсного тиристора ТИ183-2000 в Synopsys TCAD // Электроника и информационные технологии. – 2012. – Вып. 1 (12). – URL: http://fetmag.mrsu.ru/ (дата обращения 10.05.2016).