Persons

An amplification of magnetic induction in permalloy allows a several times increase of the sensitivity of magneto-semiconductor mycrosystems magnetic field. While using the permalloy films as the magnetic concentrators, it is important to exclude the anomalous codeposition of alloy components and to reduce the variability of technological parameters for optimum magnetic properties. In the work the chloride electrolyte with the pH correction by hydrochloride acid, which provides the congruent electrochemical permalloy deposition while heating has been proposed. The magnetic properties of the permalloy films, corresponding to bulk samples, have been determined. It has been shown that the magnetic properties of the permalloy films are sensitive to deviation of the composition from the ratio of 4.26 components. The control of accuracy of preparing an electrolyte for electrochemical deposition has been performed using the spectrophotometric investigation of chloride electrolyte. It has been established that the anomaly of the permalloy electrodeposition is associated with the main feature of iron ions-the existence of variable Valence iron with two or three values in the charge of ions during the hydrolysis of ions salts.

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The results of the studies on the thin films of ZnO:Ga, obtained by the magnetron sputtering of the corresponding target in argon and argon with 5% hydrogen without heating the substrate, have been presented. It has been shown that the resistivity and stability over time of the ZnO:Ga films depend on their thickness, the exposure to solar radiation and the external environment. It has been determined that the doping of the ZnO:Ga films by hydrogen can substantially reduce their resistivity and an increase the stability of the films in time can be achieved by the coating, that protects against the effects of the external gas environment.

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The use of chloride electrolytes for electrochemical deposition of NiFe permalloy seems to be promising because the sulphate electrolytes in presence of sulphur are non-stable. The magnetic properties of NiFe are very sensitive to rejection of the whole component o 4.26. In this work the control of preparing the electrolyte for electrochemical deposition has been conducted using the spectrophotometric investigation of the chloride electrolyte. The analysis of the electrolyte absorption spectrum and scattering of light by particles of iron hydroxide colloid has revealed that the dissociation of the two-valent iron and the mechanism of anomalous electrodeposition depend on temperature and affect the electrochemical deposition of the permalloy films. It has been noted, that the specific feature of the FeCl solution during hydrolysis of FeCl is the iron hydroxide precipitate (Fe(OH) in the form of colloid particles with the complex forming boric acid. It has been shown that from the chloride electrolyte with iron chloride solution filtration nickel is precipitated better than iron. It has been stated that normal congruent deposition of the NiFe alloy films takes place and the abnormal codeposition is excluded.

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High-permeability films of CoNiFe triple system form the basis for high-density magnetic data storage. Electrochemical deposition of CoNiFe films, as contrasted with «dry» processes, gives more homogeneous coating with lesser defect level and allows reinforcing the films thickness without stresses. This study investigates the nature of the phenomena taking place at electrochemical deposition of CoNiFe films and leading to the difference in the relative content of the elements in the electrolyte and in the film. The hydrogen exponent of chloride electrolytes was examined in the temperature range of 25-70 °C and electrochemical deposition of CoNiFe films at 70 °C was studied. It was demonstrated that CoCl, NiCl, FeCl salt solutions with concentration from 0,006 to 1 mole/l are characterized by complex process of ion balance formation in single and mixed solutions. The deposition of CoNiFe films was carried out from chloride electrolyte with a component content ratio of 1:1:1 at an average concentration of 0,083 mole/l of each component. It has been established that the content of the component in the film at electrochemical deposition of three-component solution CoCl, NiCl, FeCl with equal concentration of each component did not correspond to the composition of the electrolyte but was closest to the composition of the electrolyte at a decrease in the concentration of each component at high current density.

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The peculiarities of low-frequency signal reception and processing from the seismic sensor on an example of the integrated circuits based on the basic matrix crystal of 5507 series have been considered. The device is designed to detect human step. The peculiarities of the information signal received at the seismic sensor output, the microcircuit main characteristics and its structure have been presented.

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The semiconductor gas sensors with low power consumption have high sensitivity and fast response and their manufacturing technologies permit to reduce the dimensions of the transducer. In production of the semiconductor gas sensors the formation of metal-oxide sensitive layer is an important issue, in particular, the process of combination of the high-porous metal-oxide layer and integrated structures. In the paper, the results of the study on experimental transducers of the composition of gas with porous gas-sensitive layer have been presented. The gas-sensitive layer has been formed by the method of suspension inkjet printing of SnO based suspension with further annealing. The comparison of the sensitivity of the experimental samples of the gas composition transducers with the gas-sensitive layers, formed from two variants of initial suspension: based on pure SnO and SnO doped with Cr and Nb, has been performed. The dependence of variation of conductivity of the gas composition of the integrated transducer specimen on the H concentration in the air has been obtained. It has been found that the gas-sensitive layer based on SnO with Cr and Nb additives has higher sensitivity to changes in the detected gas concentration due to higher effective surface area and suppressed grains agglomeration.

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The breadboard model of a mechatronic device microsystem with the magnetotransistor transducers has been experimentally investigated. It has been determined that the microsystem of a mechatronic device with a silicon console, a micromagnet and a magnetotransistor transducer permits to control the micromovings by change of the magnetic field at resonant frequencies of the console with a micromagnet. The proposed microsystem allows receiving a magnetic signal of micromovings and vibration in the mechatronic systems and can be realized in the integrated performance.

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The results of the study on the parameters of permalloy films, produced by the electrochemical deposition in the local areas, limited by the photoresist mask on metallic surface of silicon wafer, have been presented. The experimental dependencies of magnetic parameters of the deposited permalloy on the electrolyte excerpt time have been obtained. The possibility of application of the deposited films as the magnetic field screens of the digital isolators with galvanic separation on the basis of magnetic nanostructures has been shown.

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It has been found that the relative current sensitivity of the current dual-collector lateral bipolar magnetotransistor is determined by the layout of electrodes, the dopant distribution in well (also the base of BMT), the circuit of switching-on with the general potential of the basis and substrate, an operation mode near to saturation, the value of collectors load resistance.

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The ZnO thin film investigation results have been presented for MEMS integrated device use. It has been shown that the specific resistance and stability of ZnO:Ga thin films depend significantly on their thickness, solar radiation effect, and the external environment. The instability of the ZnO thin films is caused by the processes of generation and healing the oxygen vacancies, creating the donor levels in the ZnO band gap.

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The results of the study on the local electrochemical deposition from chloride electrolyte have been presented and the permalloy films NiFe with magnetic properties, similar to 3-d models with the uniform thickness and with low mechanical stresses without high-temperature annealing have been obtained. The dependencies of the congruent deposition velocity on the current density have been presented. The peralloy films are designed to enhance the magnetic field in the magneto-semiconductor microsystems.

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