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For detecting the low-intensity optical radiation the silicon photoelectronic multiplyers are used more often. However, not all characteristics of these photoelectronic multiplyers have been thoroughly studied. So, there is no information about the influence of supply voltage on the value of the dynamic range. In the work as the study objects, the test specimens Si-PEM with a p - p - n structure, produced by JSC Integral (Republik of Belarus), have been used, as well as the serially produced silicon photomultiplyers Ketek PM 3325 and ON Semi FC 30035. It has been found that an increase in the supply voltage leads to the critical decrease. It has been discovered that an increase an in the supply voltage leads to a decreased value of the threshold intensity. It has been proved that the dependence of the dynamic range on the supply voltage has a maximum. To ensure the maximum dynamic range of registration in the photo-detector devices based on the Si-photomultiplier tubes, it is necessary to select the photo-detector supply voltage, corresponding to this maximum. The results obtained in this article can be applied in the development and design of the devices for recording the optical radiation based on silicon photomultiplier tubes.
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The implementation of such technology of data transmission as Li-Fi requires photodetectors that are optically sensitive in the visible range of wavelengths. The photomultiplier tubes are characterized by highest sensibility in this wavelength range, but also by large size, higher power supply voltage, and frangibility. An alternative to the mentioned type of photodetectors is a silicon photomultiplier tube (Si-PMT) characterized by good sensibility in the visible range of wavelengths. In this work, the throughput of an optical communication channel with an information receiver in the form of a Si-PMT is investigated. As a result, it was found that the highest throughput value corresponded to the supply voltage value equal to the breakdown voltage of the Si-PMT, and to the optical radiation wavelengths of 470 nm. It has been established that an increase in temperature causes a decrease in the transmission capacity of the photodetector, and an increase in the optical pulses’ radiant exposure leads to an increase in the transmission capacity. The results obtained can be used in the development of optical communication systems.
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