Persons

The experimental study results of modification of the probes for Critical Dimension Atomic Force Microscopy (CD-AFM) by deposition of carbon nanotubes (CNT) have been presented. This permits to improve the accuracy of determining the roughness of the submicron structures vertical walls surface. The deposition methods of individual CNT on the tip of the AFM probe, based on mechanical and electrostatic interactions between the probe and an array of the vertically aligned carbon nanotubes (VACNT), have been studied. It has been shown that when the distance between the AFM tip and an array VACNT is 1 nm and the applied voltage is in the range of 20-30 V, an individual carbon nanotube is deposited on the tip. On the basis of the obtained results a probe with the carbon nanotube on the tip (CNT probe) with the 7nm radius and an aspect ratio 1:15 the probe has been formed. The CNT probe studies have demonstrated that its use improves the resolution and accuracy of the AFM measurements as compared to the commercial probe, and, also, allows determining the roughness of the vertical walls of the high aspect structures by CD-AFM. The results obtained can be used to develop the manufacturing processes and to repair special probes for AFM, including the probes for CD-AFM, as well as to develop the techniques and the inter-operation diagnostics of the process parameters in manufacturing the elements of micro-and nanoelectronics, micro- and nanosystem structures.

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The results of experimental studies on the activation nanolithography modes of a thin titan film by local anode oxidation (LAO) have been presented. It has been determined that the use of UV-stimulation leads to reduction of the oxide nanosized structures (ONS) geometrical sizes and is accompanied by an increase of the amplitude from 6 to 7 V and the impulses duration from 50 to 100 ms of the threshold voltage at relative humidity of 50%. The results of experimental studies on the influence of the cantilever conducting covering material and the substrate temperatures on the formed ONS geometrical sizes have been presented.

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The results of experimental studies of modes of ion beam included deposition of Pt with thickness from (0.48 ± 0.1) to (17.38 ± 0.1) nm by focused ion beams have been represented. The experimentally determined rate of ion-induced deposition of Pt, which, depending on process parameters of the focused ion beam is changed from (0.28 ± 0.02) to (6.7 ± 0.5) nm/s. It has been found that the deviation of the lateral dimensions of Pt nanostructures from the designed pattern decreases from (29.3 ± 0.07) % to (2.4 ± 0.2) % for the various modes of deposition time. It has been shown that at the thicknesses of Pt nanostructures over 3 nm their resistivity is (23.4 ± 1.8) Om∙cm and weakly depends on the thickness of the structure. The results can be used to develop processes of formation of nanostructures for microelectronics, nano- and microsystems technology on the basis of the focused ion beams method.

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The results of the study on the influence of the local anodic oxidation (LAO) technological modes on the oxide nanostructures (ONS) formation process on the gallium arsenide surface have been presented. The influence of amplitude and duration of the voltage impulses, the air relative humidity level in the technological chamber and the cantilever fluctuations amplitudes on the geometrical parameters of gallium arsenide ONS has been investigated. It has been found that the increase of relative humidity level from 60 to 90% leads to the decrease in the LAO threshold voltage from 7.0 to 6.0 V. It has been shown that the increase in the fluctuation amplitude from 0.1 to 2.8 nm leads to the ONS height reduction from 3.20±0.34 to 1.10±0.13 nm and of the ONS diameter from 218.4±29.5 nm to 78.1±10.3 nm.

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