Persons

The changes in the structure and phase composition of silicon monoxide in the disproportional reaction at high temperature with the formation of the Si nanocrystalline phase have been investigated. The nanocrystalline powder after separation from silicon oxide by powder diffraction and small-angle X-ray scattering has been studied. It has been found that under optimal conditions of the silicon monoxide heat treatment the obtained powder contains the nanosilicon particles of 17-20 nm size in the volume fraction of 40%.

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The technological process for the production of silicon nanopparticles from silicon monoxide, which permits to control the particle size in the 2-10 nm range, and the methods of nanosilicon coating for solar cells have been developed. It has been shown that the nanosilicon films are characterized by good anti-reflection and passivating properties and can be successfully used in the solar cell production technology.

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Production CMOS technology node shallow trench isolation (STI) etching process control has been discussed in the present paper. It has been shown that optical scatterometry can be adopted for that in order to increase throughput and informativity of the control. In addition, it has been shown that scatterometry can replace a number of currently used techniques. The process of model suitable for the STI application creation has been discussed. A number of cross-control techniques is used to enable scatterometry for the discussed application. The application limits of the optical scatterometry are developed and techniques for control of the nodes beyond these limits have been discussed. In particular, process of CD control beyond 20 nm node has been discussed. The model created enables the control of not only the width of the trench but also its depth and sidewall angle. Those additional parameters were not controlled in-line previously and it helped to reduce production cost and increase the IC reliability. The control process has been tested on the CMOS 180 nm technology node, but its adoption to smaller nodes has been discussed.

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The reproducible technologies for creating the efficient method for suppression of the optical connection between the cells in silicon photoelectron multipliers have been experimentally studied and obtained. The mechanisms of the optical communication suppression have been considered and for each of them the influence value has been shown. The way of separation of the photosensitive cells based on etching of V-shaped trenches has been investigated. The principal possibility of optical cross-talk decreasing between the cells from 20-40% to 0.1-0.7% in the range of over bias 2-5 V, respectively, has been shown.

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The influence of the magnitude range of solutions on the efficiency of the genetic algorithm for interpreting the X-ray reflectometry has been analyzed. The optimization of the search algorithm taking into account the obtained results has been performed.

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The results of the comprehensive study on the parameters of the diffuse-barrier structures TiN/Ti by methods of relative X-ray reflectometry and diffuse X-ray scattering, based on a two-wave X-ray optical measurement scheme, have been presented. The specified X-ray optical scheme provides a study on two different areas of diffuse scattering during one measurement, which increases the accuracy and uniqueness of the analysis. It has been shown that the presented complex of methods permits to resolve the ambiguities, such as the “density - roughness” of the inverse problem of reflectometry and to calculate the parameters of the buried layers in the studied structures.

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The reproducible technologies for obtaining a negative tilt of the thick positive phototresist mask have been investigated for the lift off and electroplating applications. The possible variation range of the profile has been shown and the control mechanism of the mask tilt has been explained. The key parameters affecting the technological process have been investigated and the tolerances of these parameters from the nominal value have been specified.

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