The reproducible technologies for creating the efficient method for suppression of the optical connection between the cells in silicon photoelectron multipliers have been experimentally studied and obtained. The mechanisms of the optical communication suppression have been considered and for each of them the influence value has been shown. The way of separation of the photosensitive cells based on etching of V-shaped trenches has been investigated. The principal possibility of optical cross-talk decreasing between the cells from 20-40% to 0.1-0.7% in the range of over bias 2-5 V, respectively, has been shown.