Persons

The features of the state-of-the industry complementary bipolar ( CB ) technology for analog applications have been analyzed and the main trends of their development have been considered. Based on two parameters of the complementary quality - β× V (factor of quality) and BV × f (Johnson parameter) different industrial CB technologies have been compared. By the method of 2D - numerical simulation in TCAD Sentaurus medium for vertical NPN and PNP transistors the p-epitaxial-planar CB technology has been investigated. The quality calibration of the electrical and technological parameters of the 2D-models based on the data of the test structure has shown the adequate accuracy of simulation for practical use.

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The influence of temperature on the most important of the electrical parameters of the complementary bipolar pair of vertical transistors has been numerically investigated as a part of the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model while analyzing the high-power transistors, as the thermodynamic model takes into account the self-heating effect, has been shown. The simulation results have been compared with the experimental characteristics of the test structures. The comparison has shown that for current amplification factor β and the voltage Earley V the computational error had been less than 15 % and for the critical parameter the breakdown voltage of the collector - emitter V had been less than 2 %, which is sufficient for using the thermodynamic model for practical purposes.

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