The features of the state-of-the industry complementary bipolar ( CB ) technology for analog applications have been analyzed and the main trends of their development have been considered. Based on two parameters of the complementary quality - β× V (factor of quality) and BV × f (Johnson parameter) different industrial CB technologies have been compared. By the method of 2D - numerical simulation in TCAD Sentaurus medium for vertical NPN and PNP transistors the p-epitaxial-planar CB technology has been investigated. The quality calibration of the electrical and technological parameters of the 2D-models based on the data of the test structure has shown the adequate accuracy of simulation for practical use.
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