The influence of temperature on the most important of the electrical parameters of the complementary bipolar pair of vertical transistors has been numerically investigated as a part of the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model while analyzing the high-power transistors, as the thermodynamic model takes into account the self-heating effect, has been shown. The simulation results have been compared with the experimental characteristics of the test structures. The comparison has shown that for current amplification factor β and the voltage Earley V the computational error had been less than 15 % and for the critical parameter the breakdown voltage of the collector - emitter V had been less than 2 %, which is sufficient for using the thermodynamic model for practical purposes.
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