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Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika: Elektronika
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Izvestiya Vysshikh Uchebnykh Zavedenii.
Elektronika
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Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika
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Elektronika
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Cand. Sci. (Eng.), Research Associate of the Institute of Integrated Electronics named after Academician K. A. Valiev, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Article author
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gallium nitride
GaN
normally-off HEMT
2-dimentional electron gas
S-parameters
time-domain reflectometry
gate capacitance
noise figure
Y-factor
noise temperature
excess noise ratio
ENR
integrated inductance coil
GaN HEMT
spiral inductor model
skin-effect
parameters extraction
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Research of dependences of the normally-off GaN HEMT input parameters on the operating conditions at the GHz band
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Influence of cable loss on gain and noise figure measured using spectrum analyzer
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Parameter extraction of the integrated inductance coil model for GaN-on-Si technology process
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