Power electronics often requires normally-off operating condition of GaN HEMT when there is no current flow at zero gate-source voltage and the channel current is modulated by applying positive bias to gate terminal. Measurement of GaN HEMT parameters at the GHz band is of high importance for getting physical interpretation of its functioning, as well as for development of large-signal and small-signal models. In this work, experimental research of dependences of normally-off GaN HEMT input parameters at different operating conditions in GHz range is conducted. A procedure of line inductance measuring is proposed. The dependences of input capacitance and input resistance on gate voltage and drain voltage at the 5–20 GHz band have been given. The obtained dependences can be applied for designing small-signal model for normally-off GaN HEMT.
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Key words:
gallium nitride, GaN, normally-off HEMT, 2-dimentional electron gas, S-parameters, time-domain reflectometry, gate capacitance
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Published in:
Integral electronics elements
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Bibliography link:
Khlybov A. I., Rodionov D. V., Egorkin V. I., Kotlyarov E. Yu., Losev V. V., Chaplygin Yu. A. Research of dependences of the normally-off GaN HEMT input parameters on the operating conditions at the GHz band. Proc. Univ. Electronics, 2024, vol. 29, no. 6, pp. 763–771. https://doi.org/10.24151/1561-5405-2024-29-6-763-771. – EDN: EIYNWJ.
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Financial source:
the work has been supported by the Russian Science Foundation (projects no. 20-19-00521-П and no. 23-19-00771).
Alexander I. Khlybov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Denis V. Rodionov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Vladimir I. Egorkin
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Evgeny Yu. Kotlyarov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Vladimir V. Losev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Yury A. Chaplygin
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
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