Gallium nitride GaN and compounds based on it, in particular AlxGa1−xN, are promising semiconductors for power RF devices. Actively developing GaN based technologies are mainly oriented to analog micro- and millimeter-wave integrated circuits development, thus the relevant objective is to develop RF path passive components’ models and to extract its parameters. In this work, an integrated spiral inductor model for GaN-on-Si technology process is proposed. The analytical equations for effective inductance, input impedance, and quality factor were obtained, on the base of which the procedure of electrical parameters extraction from experimental data has been developed. The results of integrated inductance coil parameters measurement and simulation have shown good matching in the range 0.01 to 10.0 GHz. The proposed procedure can be applied to PDK development for GaN-on-Si technology processes.
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Key words:
integrated inductance coil, GaN HEMT, spiral inductor model, skin-effect, S-parameters, parameters extraction
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Published in:
Brief reports
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Bibliography link:
Khlybov A. I., Rodionov D. V., Kotlyarov E. Yu., Losev V. V., Egorkin V. I. Parameter extraction of the integrated inductance coil model for GaN-on-Si technology process. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(6):806–812. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-6-806-812.
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Financial source:
the work has been supported by the Russian Science Foundation (project no. 23-19-00771).
Alexander I. Khlybov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Denis V. Rodionov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Vladimir V. Losev
National Research University of Electronic Technology, (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Vladimir I. Egorkin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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