Persons

Ермошин Иван Геннадьевич

Article author

The distinctive features of diffraction of the multilayer heterostructures based on gallium nitride have been considered. Using the Vector-GaN installation for the x-ray diffraction the influence of the technological conditions of producing the heterostructure layers GaAlN/InGaN/GaN/AlO on the structural perfection has been revealed.

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The results of the study on the structural perfection of the layers of the heterostrucrure GaN/GaInN/AlO and the impact of the defects on the characteristics of the emitter based on them have been presented. To determine the defectiveness of the layers the x-ray diffraction method has been used. A new methods and a device based on photodiode FD-24K have been developed for estimation of the quantum yield.

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The optimization procedure in growing the layers of A3N nitrides by MOCWD method using the X-ray-diffractometry method has been considered. It has been determined that the structural perfection of the layers, obtained by measurement of the rocking waves, correlates with the emitting efficiency of the LED structures.

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