X-Ray Diffractometric Studies on Structural Properties of Solid Solution Layers Based on Gallium Nitride

X-Ray Diffractometric Studies on Structural Properties of Solid Solution Layers Based on Gallium Nitride

The distinctive features of diffraction of the multilayer heterostructures based on gallium nitride have been considered. Using the Vector-GaN installation for the x-ray diffraction the influence of the technological conditions of producing the heterostructure layers GaAlN/InGaN/GaN/AlO on the structural perfection has been revealed.
Evgeny N. Vigdorovich
Moscow Technological University, Moscow, Russia
I.G. Ermoshin
SO «Elma-Malakhit» (Moscow)
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