Persons

The SOI field-effect Hall sensors are characterized by the enhanced functionality, but by low magnetic sensitivity. Therefore, the main task is to increase the magnetic sensitivity of such sensors. The results of the study on magnetically sensitive electric characteristics of SOI FEHS, obtained using the TCAD system, have been presented. The three-dimensional modeling of the device has been carried out. The calculated Hall-gate characteristics of SOI FEHS, confirming the previously proposed physical model of the sensor, in accordance with which under certain conditions of SOI FEHS functioning the area of the increased magnetic sensitivity appears, have been obtained. The influence of the doping concentration in the sensor channel on the magnetic sensitivity has been studied. It has been shown that the magnetic sensitivity of SOI FEHS is 3 times increased at the concentration of 10 cm. The extended dynamic range of the increased magnetic sensitivity area (more than 5 V) permits to increase the area of practical application of the sensor increasing the noise immunity. The obtained SOI FEHS characteristics are in good agreement with the parameters of the experimental device published earlier.

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For multi-factor analysis of instrument characteristics of the field-effect Hall sensor on the SOI structure (SOI FEHS), by means of the TCAD simulation, the calculation of the output and transfer characteristics of SOI FEHS) two-dimensional model has been performed. The two-dimensional distributions of electrons of electric field and the current density in the SOI FEHS channel have been obtained in three typical modes of the sensor operation - full depletion, partial depletion and saturation. The obtained results are in good agreement with the experimental data and confirm the physical model of SOI FEHS, described above, and specific features of the instrument operation in the partial depletion region, when the conductive channel in SOI FEHS body is formed.

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The influence of the doping concentration in the active layer and in the bulk substrate on the drain current of the SOI field by the Hall sensor device-technological simulation package Synopsys Sentarius has been studied. At the initial stage the numerical model correction has been performed by comparing the transmission current-voltage characteristics of the calculation and the previously created and experimentally measured sample SOI FEHS. It has been shown that at low concentrations in the active layer the drain current depends on the capacity of the front gate and the doping concentration level of the bulk substrate affects the drain current only when the device is operating in depletion mode.

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The sensitivity and the initial offset of voltage between the collectors of the two-collector lateral bipolar magnetotransistor of npn-type with the base, formed in the well being the third collector (3KBMTBW) at the reduced rate of the surface recombination in the base, have been experimentally investigated. The magnetotransistor switch-on circuit determines the operation mode and the device parameters. It has been shown, that the magnetosensitivity of voltage achieves 11 V/T.

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Some specific features of the device-technological simulation have been considered. The results of the simulation and optimization of the integrated magnetosensitive elements as a part of micro- and nanosystems have been considered. The results of the simulation and optimization of the constructive -technological parameters for magnetosensitive transistors, Hall integrated elements, formed within the CMOS technology standards and the field Hall sensor based on the SOI technology as well as the characteristics of magnetic field concentrators have been presented.

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It has been found that the relative current sensitivity of the current dual-collector lateral bipolar magnetotransistor is determined by the layout of electrodes, the dopant distribution in well (also the base of BMT), the circuit of switching-on with the general potential of the basis and substrate, an operation mode near to saturation, the value of collectors load resistance.

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