The influence of the doping concentration in the active layer and in the bulk substrate on the drain current of the SOI field by the Hall sensor device-technological simulation package Synopsys Sentarius has been studied. At the initial stage the numerical model correction has been performed by comparing the transmission current-voltage characteristics of the calculation and the previously created and experimentally measured sample SOI FEHS. It has been shown that at low concentrations in the active layer the drain current depends on the capacity of the front gate and the doping concentration level of the bulk substrate affects the drain current only when the device is operating in depletion mode.
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