Persons

The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.

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A design and size of the membrane module package have a significant impact on its characteristics. It is necessary to use the finite element modeling calculation of the frequency response of the membrane module membrane due to complexity of the package design. In this study the method of the thin dielectric membrane modeling by means of the structural and acoustic analysis in the ANSYS software has been proposed. This method permits to perform the calculation taking into account the influence of the front and back chambers sizes. The dependences of resonance frequency of the front chamber and back chamber on its geometric sizes have been obtained. It has been shown that with the back chamber size increasing, the value of the membrane sensitivity approaches to its parameters in the open space and with the account of the front and back chambers. The membrane modules frequency response comparison has been performed and has been shown that the presence of the front and back chambers significantly affects the values of the resonance frequency and sensitivity. The method of setting resilient stresses in the membrane using thermal impact has been used. The complicatedly deformed state of the membrane, called the buckling effect, has been obtained. The calculation of the dielectric membrane with an account of the buckling effect has been executed. The analysis of the obtained results has been performed and it has been shown that the calculated sensitivity of the membrane with an account of the buckling effect have a good coincidence with the measurements results. The proposed method enables to calculate the membrane module frequency response with an account of impact of the package design peculiarities and also, to take into account the residual stresses in the membrane. The use of the structural-acoustic analysis enables to achieve more accurate results while calculating the membrane frequency response, which increases the efficiency of the acoustic pressure transducers designing, and ensures an achievement of the product optimal characteristics.

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The structural and technological solutions to create the magnetosemiconductor components for wireless microsystem magnetoresistive magnetic field measurements as well as the study results for a high-sensitivity magnetoresistive transducer with a magnetic field concentrator have been presented. The characteristics of the instrumentation amplifier designed for use with the low-impedance signal from the magnetoresistive bridge, having a certain amount of its imbalance, have been given. The combined technology of manufacturing magnetosemiconductor IC based on the thin-film magnetoresistive structures has been described.

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The results of the development of technologies for magnetic semiconductor chips based on thin-film magnetoresistive multilayer nanostructures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effect is made.

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The analysis of the exhibition «Productronika - 2007» exposition, that is one of the leading exhibitions of the technological equipment for production of electronic technology items, has been performed.

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