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The voltage-current (VC) and lux-current (LC) room temperature characteristics of high-ohmic CdTe (CT) and Cd1-YZnYTe (CZT) samples with various illumination intensities have been investigated. The dependencies of the short-circuit current and open-circuit voltage with light intensity, when the CT and CZT-samples were illuminated by 740-nanometer red color radiation, have been also investigated. It has been shown that the lux-current characteristics of zinc cadmium telluride sample depend on the applied voltage polarity; the voltage-current characteristics strongly depend on the light intensity and have peculiar fracture at the coordinate zero-point. It has been assumed that within the sample the introduced electric field due to the technological ingot growth and annealing conditions exists.
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The contactless non-destructive method makes possible the determination of the concentration of free electrons in the indium antimonide samples by room temperature far infrared reflection spectra. The computer program, giving the possibility to determine the wave number characteristic values with the help of the Kramers-Kronig relations, has been developed. The rated calibrated dependence for the electron concentration determination by the wave number characteristic value has been calculated. It has been shown that this dependence is described by cubic polynomial. While calculating the dependence of the electron effective mass on the energy has been taken into account. It has been determined that in defining the electrons concentration it is necessary to take into account the plasmon-phonon interaction, especially for N £ 5·10 см values. The estimation of the systematic error of defining N , which appears, if Plasmon-phonon coupling is neglected, has been executed. The developed software program permits by the experimentally measured reflection spectra to calculate the values of the N electron concentration, to store and process the obtained results. The program has been tested on an example of the sample reflection spectrum of heavily doped n -InSb.
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The galvanomagnetic Van der Pau measurements have been carried out on monocrystalline Cd HgTe (MCT) samples and epitaxial Cd HgTe/ CdZn Te (MCT/CZT) heterostructures ( x » 0,2) at T = 295 K and T = 77 K. The sample along with the cryostat rotated in magnetic field of electromagnet by (0-360°) - angle with 6-degree step. Angular dependencies of measured signal for p -type monocrystalline sample at T = 77 K were shown to be sinusoidal, hence, Hall coefficient did not depend upon magnetic field induction. However, for epitaxial MCT/CZT- heterostructures at T = 77 K measured signal angular dependencies differed greatly from sinusoids.
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The influence of the illumination of the n-type semi-insulating gallium arsenide sample central part upon the sample conductivity has been investigated. The luxe-ampere dependence beginning from some light intensity has been shown to become linear, and its angular coefficient increased with illuminated area diameter increasing. This dependence has been described by the degree function between linear and square ones. The cut-off current dependence upon the illuminated area diameter has been shown to be superlinear. The qualitative model, explaining the observed experimental data, has been proposed.
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The contactless non-destructive method of charge free carrier concentration determination in monocrystalline samples of Cd HgTe solid solutions and multilayer epitaxial heterostructures on their base by far infrared reflection spectra has been suggested. On the reflection coefficient dependence, obtained at the room temperature, the characteristic point and the corresponding wave number have been determined. Using the calculated calibration curves the concentration value of heavy holes has been determined. It has been shown that in constructing the calibration curves it is necessary to take into account the plasmon coupling with longitudinal optic phonons.
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