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Articles

  • Main active elements in the frequency range from a few to a hundred gigahertz still are field-effect transistors with Schottky barrier based on gallium arsenide, other AB compounds and various heterostructures based on them. For optoelectronics, gall...

Authors: Evgeny N. Vigdorovich
347 - 352
  • The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by great...

Authors: Konstantin A. Tsarik
353 - 362
  • At the IC design phase it is required to consider all possible factors to ensure the produced device’s compliance with specified requirements. For instance, it is necessary to select an optimum package and to lower its impact on IC’s final characteri...

Authors: Egor N. Belov, Yury A. Savostin
363 - 373
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