Transition from planar MOSFET structures to FinFET 3D structures ensures various radiation type resistance. However, the characteristics of radiation-exposed devices made at different factories vary considerably and it is hard to explain FinFET structures’ radiation resistance dependence on variations of their physical and topological parameters and electrical modes. In this work, a RAD-TCAD model of FinFET on bulk silicon was developed. Additional semi-empirical radiation dependences specific to FinFET structures were introduced into the basic model of a nanometer MOSFET: the charge carrier effective mobility, the traps concentration in the SiO and HfO oxides and at the Si / SiO interface. The model was implemented in the Sentaurus Synopsys TCAD environment. The model was validated on a test set of FinFET structures with a channel length from 60 nm to 7 nm before and after exposure to gamma irradiation in the dose range up to 1 Mrad. Comparison of the modeled and experimental I-V characteristics has shown an error of no more than 15 %.
Denis S. Silkin
National Research University Higher School of Economics, Moscow, Russia
Dmitriy A. Popov
National Research University Higher School of Economics, Moscow, Russia
Bo Li
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China
1. Hook T.B. Fully depleted devices for designers: FDSOI and FinFETs // Proceedings of the IEEE 2012 Custom Integrated Circuits Conference. San Jose: IEEE, 2012. P. 1–7. DOI: https://doi.org/10.1109/CICC.2012.6330653
2. Intel 22nm FinFET (22FFL) process technology for RF and mm wave applications and circuit design optimization for FinFET technology / H.-J. Lee, S. Rami, S. Ravikumar et al. // 2018 IEEE International Electron Devices Meeting (IEDM). San Francisco: IEEE, 2018. P. 14.1.1–14.1.4. DOI: https://doi.org/10.1109/IEDM.2018.8614490
3. Experimental study of gate-first FinFET threshold-voltage mismatch / Q. Zhang, C. Wang, H. Wang et al. // IEEE Transactions on Electron Devices. 2014. Vol. 61. Iss. 2. P. 643–646. DOI: https://doi.org/10.1109/TED.2013.2295715
4. King M.P. FinFET technologies for digital systems with radiation requirements: TID SEE basic mechanisms and lessons learns // Office of Scientific and Technical Information: [Web] / United States. Sept. 2017. URL: https://www.osti.gov/servlets/purl/1474226 (accessed: 31.05.2021).
5. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance / M.P. King, X. Wu, M. Eller et al. // IEEE Trans-actions on Nuclear Science. 2017. Vol. 64. Iss. 1. P. 285–292. DOI: https://doi.org/10.1109/TNS.2016.2634538
6. Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies / H. Hughes, P. McMarr, M. Alles et al. // 2015 IEEE Radiation Effects Data Workshop (REDW). Boston: IEEE, 2015. P. 1–6. DOI: https://doi.org/10.1109/REDW.2015.7336740
7. Sicard E. Introducing 14-nm FinFET technology in Microwind. Jun. 2017 // Open archive HAL: [Web] / CCSD. URL: https://hal.archives-ouvertes.fr/hal-01541171/document (accessed: 31.05.2021).
8. Sicard E. Introducing 7-nm FinFET technology in Microwind. Jul. 2017 // Open archive HAL: [Web] / CCSD. URL: https://hal.archives-ouvertes.fr/hal-01558775/document (accessed: 15.04.2021).
9. Mohammed M.U., Nizam A., Chowdhury M.H. Performance stability analysis of SRAM cells based on different FinFET devices in 7nm technology // 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). Burlingame: IEEE, 2018. P. 1–3. DOI: https://doi.org/10.1109/S3S.2018.8640161
10. Process variation dependence of total ionizing dose effects in bulk nFinFETs / B. Li, Y.-B. Huang, L. Yang et al. // Microelectronics Reliability. 2018. Vol. 88–90. P. 946–951. DOI: https://doi.org/10.1016/j.microrel.2018.07.020
11. Artola L., Hubert G., Schrimpf R.D. Modeling of radiation-induced single event transi-ents in SOI FinFETS // 2013 IEEE International Reliability Physics Symposium (IRPS). Monte-rey: IEEE, 2013. P. SE.1.1–SE.1.6. DOI: https://doi.org/10.1109/IRPS.2013.6532108
12. Lakshmi B., Srinivasan R. 3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET // 2011 International Conference on Emerging Trends in Electrical and Computer Technology. Nagercoil: IEEE, 2011. P. 589–593. DOI: https://doi.org/10.1109/ICETECT.2011.5760186
13. Donati Guerrieri S., Bonani F., Ghione G. A novel TCAD approach to temperature de-pendent DC FinFET variability analysis // 2018 13th European Microwave Integrated Circuits Conference (EuMIC). Madrid: IEEE, 2018. P. 230–233. DOI: https://doi.org/10.23919/EuMIC.2018.853988
14. Bhoj A.N., Joshi R.V., Jha N.K. 3-D-TCAD-based parasitic capacitance extraction for emerging multigate devices and circuits // IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2013. Vol. 21. No. 11. P. 2094–2105. DOI: https://doi.org/10.1109/TVLSI.2012.2227848
15. Semiconductor science and technology validation of 30 nm process simulation using 3D TCAD for FinFET devices / M. Nawaz, W. Molzer, P. Haibach et al. // Semiconductor Science and Technology. 2006. Vol. 21. No. 8. P. 1111–1120. DOI: https://doi.org/10.1088/0268-1242/21/8/023
16. Wang G. Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond. Gateway East: Springer Singapore, 2019. XVI, 115 p. DOI: https://doi.org/10.1007/978-981-15-0046-6
17. Mujtaba S.A. Advanced mobility models for design and simulation of deep submicrometer MOSFETs: a dissertation. Stanford, CA: Stanford University, 1995. XVII, 153 p.
18. Schenk A. Advanced physical models for silicon device simulation. Vienna: Springer, 1998. XVIII, 354 p. DOI: https://doi.org/10.1007/978-3-7091-6494-5
19. Shur M.S. Low ballistic mobility in submicron HEMTs // IEEE Electron Device Letters. 2002. Vol. 23. No. 9. P. 511–513. DOI: https://doi.org/10.1109/LED.2002.802679
20. Metal gate work function tuning by Al incorporation in TiN / L.P.B. Lima, H.F.W. Dekkers, J.G. Lisoni, J.A. Diniz et al. // Journal of Applied Physics. 2014. Vol. 115. Iss. 7. P. 074504-1–074504-5. DOI: https://doi.org/10.1063/1.4866323
21. Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure / X.-R. Wang, Y.-L. Jiang, Q. Xie et al. // Microelectronic Engineer-ing. 2011. Vol. 88. Iss. 5. P. 573–577. DOI: https://doi.org/10.1016/j.mee.2010.06.029
22. Петросянц К.О., Попов Д.А., Быков Д.В. TCAD-моделирование дозовых радиа-ционных эффектов в суб-100-нм high-k МОП-транзисторных структурах // Изв. вузов. Электроника. 2017. Т. 22. № 6. С. 569–581. DOI: https://doi.org/10.214151/1561-5405-2017-22-6-569-581
23. Petrosyants K.O., Kozhukhov M.V., Popov D.A. Effective radiation damage models for TCAD simulation of silicon bipolar and MOS transistor and sensor structures // Sensors and Transducers. 2018. Vol. 227. No. 11. P. 42–50.
24. Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs / F. El Mamouni, E.X. Zhang, R.D. Schrimpf et al. // IEEE Transactions on Nuclear Science. 2009. Vol. 56. No. 6. P. 3250–3255. DOI: https://doi.org/10.1109/TNS.2009.2034155
25. Total dose response of transconductance in MOSFETs at low temperature / R.L. Pease, S.D. Clark, P.L. Cole et al. // IEEE Transactions on Nuclear Science. 1994. Vol. 41. No. 3. P. 549–554. DOI: https://doi.org/10.1109/23.299797
26. Geometry dependence of total-dose effects in bulk FinFETs / I. Chatterjee, E.X. Zhang, B.L. Bhuva et al. // IEEE Transactions on Nuclear Science. 2014. Vol. 61. No. 6. P. 2951–2958. DOI: https://doi.org/10.1109/TNS.2014.2367157
27. Huo Q., Wu Z., Zhang F., Li L. A modeling approach for 7nm technology node area-consuming circuit optimization and beyond // 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD). Lausanne: IEEE, 2019. P. 93–96. DOI: https://doi.org/10.1109/SMACD.2019.8795254